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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,600 pcs
|
1600 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The BD1396STU is an NPN bipolar junction transistor manufactured by On Semiconductor. It features a maximum collector-emitter voltage of 80V and a continuous collector current of 1.5A. The device can dissipate up to 1.25W of power and has a junction temperature rating of 150°C. The DC current gain (hFE) is a minimum of 40 at 150mA collector current and 2V collector-emitter voltage. The saturation voltage is typically 500mV at 50mA base current and 500mA collector current. The transistor is housed in a through-hole TO-126-3 package, making it suitable for PCB mounting. It is marked as RoHS3 compliant.
| Qty | Low | High |
|---|---|---|
| 1,024+ | $0.29 | $0.29 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The BD1396STU comes in a through-hole TO-126-3 package (also referred to as TO-225AA).
The maximum junction temperature is 150°C.
It is listed as RoHS3 compliant, but this status is unverified.
The maximum collector-emitter voltage is 80V.
The maximum collector current is 1.5A.
The minimum DC current gain is 40 at 150mA collector current and 2V collector-emitter voltage.
The maximum saturation voltage is 500mV at 50mA base current and 500mA collector current.