BD13910STU NPN bipolar transistor rated for 80V collector-emitter voltage and 1.5A collector current. Packaged in a TO-126-3 through-hole case.
Mfr Part #:

BD13910STU

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
NPN bipolar transistor rated for 80V collector-emitter voltage and 1.5A collector current. Packaged in a TO-126-3 through-hole case.
Total Stock: 1,567 pcs
$ Price Range: $1.13

BD13910STU Available from 2 distributors

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Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
1,507 pcs
1507 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
60 pcs
60 pcs On Request 1 On Request On Request On Request On Request On Request

BD13910STU Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Mounting Type
Operating Temperature
Power
Storage Temperature
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

BD13910STU Description

Short technical summary and product information.

The BD13910STU is an NPN bipolar junction transistor manufactured by ON Semiconductor. It is designed for general-purpose amplification and switching applications in through-hole designs.

 

Key electrical specifications include a collector-emitter breakdown voltage (Vceo) of 80 V, a continuous collector current (Ic) rating of 1.5 A, and a power dissipation (Pd) of 1.25 W. The DC current gain (hFE) is minimum 63 at 150 mA collector current and 2 V collector-emitter voltage. The collector-emitter saturation voltage is maximum 500 mV at 500 mA collector current and 50 mA base current.

 

The transistor is housed in a TO-225AA / TO-126-3 through-hole package, which allows easy mounting on printed circuit boards. The operating junction temperature is rated up to 150°C. It is marked as RoHS3 compliant and has an MSL of 1 (unlimited).

 

This component is a reliable choice for low-power linear and switching circuits where moderate voltage and current handling is needed.

BD13910STU Quick Information

Product Type: Bipolar Transistor (BJT)
Canonical Name: NPN Bipolar Transistor, 80V Vce, 1.5A Ic, TO-126-3
Subcategory: Single BJT

BD13910STU Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

BD13910STU Estimated Pricing

Qty Low High
1+ $1.13 $1.13

Estimated market price range - modelled values for guidance only, not live distributor offers.

BD13910STU Features

  • NPN bipolar transistor with 80V collector-emitter voltage.
  • Rated for 1.5A continuous collector current.
  • Power dissipation up to 1.25W.
  • Through-hole TO-126-3 package for easy mounting.
  • Operating junction temperature up to 150°C.

BD13910STU Applications

  • Operates at collector voltages up to 80V.
  • Suitable for low-power switching circuits.
  • Used in linear amplifier stages.

BD13910STU FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-emitter voltage rating of BD13910STU?

80 V.

What is the maximum collector current?

1.5 A.

What is the power dissipation rating?

1.25 W.

What package does the BD13910STU come in?

Through-hole TO-225AA / TO-126-3 package (supplier package TO-126-3).

What is the maximum junction temperature?

150°C.

What is the DC current gain (hFE) of BD13910STU?

Minimum 63 at 150 mA collector current and 2 V collector-emitter voltage.

What is the Vce saturation voltage?

Maximum 500 mV at 500 mA collector current and 50 mA base current.

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