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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,507 pcs
|
1507 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
60 pcs
|
60 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The BD13910STU is an NPN bipolar junction transistor manufactured by ON Semiconductor. It is designed for general-purpose amplification and switching applications in through-hole designs.
Key electrical specifications include a collector-emitter breakdown voltage (Vceo) of 80 V, a continuous collector current (Ic) rating of 1.5 A, and a power dissipation (Pd) of 1.25 W. The DC current gain (hFE) is minimum 63 at 150 mA collector current and 2 V collector-emitter voltage. The collector-emitter saturation voltage is maximum 500 mV at 500 mA collector current and 50 mA base current.
The transistor is housed in a TO-225AA / TO-126-3 through-hole package, which allows easy mounting on printed circuit boards. The operating junction temperature is rated up to 150°C. It is marked as RoHS3 compliant and has an MSL of 1 (unlimited).
This component is a reliable choice for low-power linear and switching circuits where moderate voltage and current handling is needed.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.13 | $1.13 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
80 V.
1.5 A.
1.25 W.
Through-hole TO-225AA / TO-126-3 package (supplier package TO-126-3).
150°C.
Minimum 63 at 150 mA collector current and 2 V collector-emitter voltage.
Maximum 500 mV at 500 mA collector current and 50 mA base current.