BD139 NPN silicon medium-power transistor with 80V collector-emitter voltage and 1.5A collector current. Housed in a TO-126 through-hole package.
Mfr Part #:

BD139

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
NPN silicon medium-power transistor with 80V collector-emitter voltage and 1.5A collector current. Housed in a TO-126 through-hole package.
Total Stock: 17 pcs
$ Price Range: $0.43 - $1.81

BD139 Available from 1 distributor

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BD139 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Base Current
Base-Emitter On Voltage
Collector-Base Voltage (VCBO)
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
DC Current Gain (hFE) (Minimum @ IC=0.005 A, VCE=2 V)
DC Current Gain (hFE) (Minimum @ Ic=-0.5 A, Vce=-2 V)
Emitter-Base Voltage (VEBO)
Halogen Free
Mounting Type
Operating Temperature
Power
Power Dissipation (Maximum @ TC=25 °C)
Supplier Device Package
Thermal Resistance - Junction to Case
Thermal Resistance Junction-to-Ambient
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

BD139 Description

Short technical summary and product information.

The BD139 is an NPN silicon medium-power transistor designed for audio amplifiers and drivers. It features a collector-emitter voltage (VCEO) of 80V and a collector current rating of 1.5A.

 

Key electrical characteristics include a DC current gain (hFE) range of 40-250 at 150mA, and a low collector-emitter saturation voltage of 0.5V at 500mA. The device can dissipate up to 12.5W at case temperature 25°C.

 

The transistor is housed in a TO-225AA / TO-126-3 through-hole package, suitable for PCB mounting. It is Pb-free, halogen-free, and RoHS compliant. Operating temperature range is -55°C to 150°C.

BD139 Quick Information

Product Type: Bipolar Transistor
Canonical Name: BD139 NPN Bipolar Transistor
Subcategory: Single NPN

BD139 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): MSL 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-Free

BD139 Estimated Pricing

Qty Low High
1+ $1.81 $1.81
50+ $0.86 $0.86
100+ $0.77 $0.77
500+ $0.60 $0.60
1,000+ $0.55 $0.55
2,000+ $0.51 $0.51
5,000+ $0.46 $0.46
10,000+ $0.43 $0.43

Estimated market price range - modelled values for guidance only, not live distributor offers.

BD139 Features

  • NPN silicon medium-power transistor.
  • 80V collector-emitter voltage rating.
  • 1.5A continuous collector current.
  • Low saturation voltage of 0.5V.
  • RoHS compliant and Pb-free.

BD139 Applications

  • Audio amplifier output and driver stages.
  • Complementary circuit designs with BD140.
  • General purpose medium-power switching.
  • Linear amplifier applications.

BD139 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-emitter voltage rating of the BD139?

The BD139 has a collector-emitter voltage (VCEO) of 80V.

What package does the BD139 come in?

The BD139 is available in a TO-225AA / TO-126-3 through-hole package.

What is the operating temperature range of the BD139?

The BD139 operates from -55°C to 150°C.

Is the BD139 RoHS compliant?

Yes, the BD139 is RoHS compliant and Pb-free.

What is the maximum collector current of the BD139?

The maximum collector current is 1.5A.

What is the DC current gain (hFE) of the BD139?

The DC current gain ranges from 40 to 250 at 150mA collector current and 2V VCE.

What is the power dissipation of the BD139?

The power dissipation is 1.25W at 25°C ambient and 12.5W at 25°C case temperature.

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