BD139-10 NPN bipolar transistor with 80V collector-emitter voltage and 1.5A collector current. Suitable for general purpose amplification and switching applications.
Mfr Part #:

BD139-10

Available from 3 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
NPN bipolar transistor with 80V collector-emitter voltage and 1.5A collector current. Suitable for general purpose amplification and switching applications.
✓ Total Stock: 29,431 pcs
$ Price Range: $0.31 - $1.37

BD139-10 Available from 3 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
26,750 pcs
26750 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
2,670 pcs
2670 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
11 pcs
11 pcs On Request 1 On Request On Request On Request On Request On Request

BD139-10 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Mounting Type
Operating Temperature
Power
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

BD139-10 Description

Short technical summary and product information.

The BD139-10 is an NPN bipolar junction transistor manufactured by STMicroelectronics. It features a maximum collector-emitter voltage (VCEO) of 80V and a maximum collector current (IC) of 1.5A. Power dissipation is rated at 1.25W maximum, with a junction temperature limit of 150°C. The transistor offers a minimum DC current gain (hFE) of 40 at 150mA collector current and 2V collector-emitter voltage, and a maximum collector-emitter saturation voltage of 500mV at 50mA base current and 500mA collector current.

 

The device is designed for through-hole mounting and is available in TO-225AA and TO-126-3 packages, with a supplier device package of SOT-32. It is listed as RoHS3 compliant and REACH unaffected, though these compliance statuses are unverified. The BD139-10 is suitable for general purpose amplification, medium-power switching, and driver stages in audio and linear applications.

BD139-10 Quick Information

Product Type: Bipolar (BJT) Transistor
Canonical Name: BD139-10 NPN Bipolar Transistor
Subcategory: Single NPN

BD139-10 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

BD139-10 Estimated Pricing

Qty Low High
1+ $1.37 $1.37
50+ $0.64 $0.64
100+ $0.57 $0.57
500+ $0.44 $0.44
1,000+ $0.40 $0.40
2,000+ $0.37 $0.37
5,000+ $0.33 $0.33
10,000+ $0.31 $0.31

Estimated market price range - modelled values for guidance only, not live distributor offers.

BD139-10 Features

  • NPN bipolar transistor with 80V VCEO.
  • Maximum collector current of 1.5A.
  • Power dissipation rated at 1.25W.
  • Minimum DC current gain of 40.
  • Through-hole SOT32 package.

BD139-10 Applications

  • General purpose amplification circuits.
  • Medium power switching applications.
  • Driver stages in audio amplifiers.
  • Linear voltage regulator circuits.

BD139-10 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage of the BD139-10?

80V.

What package options are available for the BD139-10?

The BD139-10 is available in TO-225AA, TO-126-3 packages, with supplier device package SOT-32.

What is the maximum junction temperature for the BD139-10?

150°C.

Is the BD139-10 RoHS compliant?

Yes, it is listed as RoHS3 Compliant (unverified).

What is the maximum collector current of the BD139-10?

1.5A.

What is the DC current gain (hFE) of the BD139-10?

Minimum 40 at 150mA, 2V.

What is the saturation voltage of the BD139-10?

Maximum 500mV at 50mA base current and 500mA collector current.

Home
Account

Categories