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BD139 The BD139 is an NPN bipolar junction transistor rated for 80V collector-emitter voltage and 1.5A collector current. It comes in a through-hole SOT32-3 package.
Mfr Part #:

BD139

Available from 5 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
The BD139 is an NPN bipolar junction transistor rated for 80V collector-emitter voltage and 1.5A collector current. It comes in a through-hole SOT32-3 package.
✓ Total Stock: 50,532 pcs
$ Price Range: $0.14 - $1.12

BD139 Available from 5 distributors

✓ Authorised
✓ Non-Authorised
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

BD139 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Halogen Free
Lead Style
Mounting Type
Operating Temperature
Power
Supplier Device Package
Tape & Reel
Termination Style
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
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BD139 Description

Short technical summary and product information.

The BD139 is a silicon NPN power transistor designed for medium-power audio amplifier and driver applications. It features a collector-emitter breakdown voltage of 80V and a maximum DC collector current of 1.5A, making it suitable for general-purpose switching and linear amplification.

 

Electrical characteristics include a minimum DC current gain (hFE) of 40 at 150mA and 2V, and a maximum collector-emitter saturation voltage of 500mV at 500mA. The device can dissipate up to 12.5W at a case temperature of 25°C, with a junction-to-case thermal resistance of 10°C/W.

 

The transistor is housed in a through-hole TO-225AA / TO-126-3 package, also designated as SOT32-3. It is rated for operation up to a maximum junction temperature of 150°C. The part is RoHS compliant and lead-free.

BD139 Quick Information

Product Type: Bipolar Junction Transistor (BJT)
Canonical Name: BD139 NPN Bipolar Transistor
Subcategory: Single NPN

BD139 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Lead Free

BD139 Estimated Pricing

Qty Low High
1+ $1.12 $1.12
10+ $0.79 $0.79
100+ $0.56 $0.56
500+ $0.35 $0.35
1,000+ $0.26 $0.26
2,500+ $0.23 $0.23
6,000+ $0.20 $0.20
12,000+ $0.17 $0.17
30,000+ $0.14 $0.14

Estimated market price range - modelled values for guidance only, not live distributor offers.

BD139 Features

  • NPN silicon power transistor for medium-power applications.
  • Rated for 80V collector-emitter breakdown voltage.
  • Supports up to 1.5A DC collector current.
  • Maximum power dissipation of 12.5W at case temperature.
  • Through-hole SOT32-3 package for easy mounting.

BD139 Applications

  • Audio amplifier output and driver stages.
  • General purpose switching and linear circuits.
  • Complementary designs with PNP BD140 transistor.

BD139 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-emitter voltage rating of the BD139?

The BD139 has a minimum collector-emitter breakdown voltage (VCEO) of 80V.

What is the maximum collector current for the BD139?

The maximum DC collector current is 1.5A.

What is the power dissipation of the BD139?

The maximum power dissipation is 1.25W at 25°C ambient temperature, and 12.5W at 25°C case temperature.

What package does the BD139 come in?

The BD139 is available in a through-hole TO-225AA / TO-126-3 package, also known as SOT32-3.

What is the operating temperature range for the BD139?

The maximum junction temperature is 150°C, with a storage temperature range of -55°C to 150°C.

Is the BD139 RoHS compliant?

Yes, the BD139 is RoHS compliant and lead-free.

What is the DC current gain (hFE) of the BD139?

The minimum DC current gain (hFE) is 40 at a test condition of Ic=150mA and Vce=2V.

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