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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
7,975 pcs
|
7975 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
80 pcs
|
80 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Medical Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The BD138G is a PNP bipolar junction transistor designed for general-purpose amplifier and switching applications. Manufactured by On Semiconductor, this device offers a collector-emitter breakdown voltage (Vceo) of 60V and a continuous collector current (Ic) of 1.5A. With a power dissipation of 1.25W, it is suitable for moderate power circuits. The DC current gain (hFE) is a minimum of 40 at 150mA collector current and 2V collector-emitter voltage. The collector-emitter saturation voltage is typically 500mV at 50mA base current and 500mA collector current. The transistor is housed in a TO-225AA / TO-126-3 through-hole package, making it easy to mount on PCBs. The operating junction temperature range is -55°C to 150°C. This device is RoHS3 compliant and has an MSL of 1 (unlimited). It is commonly used in power management, driver stages, and linear amplification circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.61 | $1.61 |
| 10+ | $1.02 | $1.02 |
| 100+ | $0.68 | $0.68 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
60V.
TO-225AA / TO-126-3 through-hole package.
-55°C to 150°C (junction).
Yes, RoHS3 compliant (unverified).
Minimum 40 at 150mA collector current and 2V collector-emitter voltage.
Maximum 500mV at 50mA base current and 500mA collector current.
1.25W.