BD138G The BD138G is a PNP bipolar junction transistor from On Semiconductor. It features a collector-emitter breakdown voltage of 60V, collector current of 1.5A, and power dissipation of 1.25W in a TO126 through-hole package.
Mfr Part #:

BD138G

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
The BD138G is a PNP bipolar junction transistor from On Semiconductor. It features a collector-emitter breakdown voltage of 60V, collector current of 1.5A, and power dissipation of 1.25W in a TO126 through-hole package.
Total Stock: 8,055 pcs
$ Price Range: $0.68 - $1.61

BD138G Available from 2 distributors

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Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
7,975 pcs
7975 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
80 pcs
80 pcs On Request 1 On Request On Request On Request On Request On Request

BD138G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Medical Grade
Mounting Type
Operating Temperature
Power
Storage Temperature
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

BD138G Description

Short technical summary and product information.

The BD138G is a PNP bipolar junction transistor designed for general-purpose amplifier and switching applications. Manufactured by On Semiconductor, this device offers a collector-emitter breakdown voltage (Vceo) of 60V and a continuous collector current (Ic) of 1.5A. With a power dissipation of 1.25W, it is suitable for moderate power circuits. The DC current gain (hFE) is a minimum of 40 at 150mA collector current and 2V collector-emitter voltage. The collector-emitter saturation voltage is typically 500mV at 50mA base current and 500mA collector current. The transistor is housed in a TO-225AA / TO-126-3 through-hole package, making it easy to mount on PCBs. The operating junction temperature range is -55°C to 150°C. This device is RoHS3 compliant and has an MSL of 1 (unlimited). It is commonly used in power management, driver stages, and linear amplification circuits.

BD138G Quick Information

Product Type: Bipolar Transistor - Single
Series: BD136
Canonical Name: BD138G PNP Bipolar Transistor
Subcategory: PNP Transistor

BD138G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

BD138G Estimated Pricing

Qty Low High
1+ $1.61 $1.61
10+ $1.02 $1.02
100+ $0.68 $0.68

Estimated market price range - modelled values for guidance only, not live distributor offers.

BD138G Features

  • PNP bipolar junction transistor.
  • 60V collector-emitter breakdown voltage.
  • 1.5A continuous collector current.
  • 1.25W power dissipation.
  • TO126 through-hole package.

BD138G Applications

  • Used in general-purpose amplifier circuits.
  • Suitable for switching applications.
  • Ideal for driver stages in power supplies.
  • Common in relay and solenoid drivers.

BD138G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-emitter breakdown voltage of the BD138G?

60V.

What package does the BD138G come in?

TO-225AA / TO-126-3 through-hole package.

What is the operating temperature range of the BD138G?

-55°C to 150°C (junction).

Is the BD138G RoHS compliant?

Yes, RoHS3 compliant (unverified).

What is the DC current gain (hFE) of the BD138G?

Minimum 40 at 150mA collector current and 2V collector-emitter voltage.

What is the collector-emitter saturation voltage of the BD138G?

Maximum 500mV at 50mA base current and 500mA collector current.

What is the power dissipation of the BD138G?

1.25W.

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