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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
17,529 pcs
|
17529 pcs | On Request | 1 | On Request | On Request | 05+11+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Storage Temperature | |
| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The BD13810STU is a PNP bipolar junction transistor (BJT) manufactured by On Semiconductor. It is designed for through-hole mounting and housed in a TO-126-3 package (also known as TO-225AA). This transistor is suitable for general purpose switching and amplification applications.
Electrical characteristics include a maximum collector-emitter breakdown voltage (VCEO) of 60V, a maximum collector current (IC) of 1.5A, and a maximum power dissipation (Pd) of 1.25W. The DC current gain (hFE) is a minimum of 63 at a test condition of Ic=150mA, Vce=2V. The collector-emitter saturation voltage (Vce sat) is a maximum of 500mV at Ib=50mA, Ic=500mA. The device can operate at a maximum junction temperature of 150°C.
The transistor is RoHS3 compliant, with a moisture sensitivity level (MSL) of 1 (unlimited) and is REACH unaffected. These compliance statuses are based on existing database records and are unverified.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.06 | $1.06 |
| 60+ | $0.47 | $0.47 |
| 120+ | $0.42 | $0.42 |
| 540+ | $0.33 | $0.33 |
| 1,020+ | $0.30 | $0.30 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter breakdown voltage (VCEO) is 60V.
It is available in a TO-126-3 (TO-225AA) through-hole package.
The maximum junction temperature is 150°C.
It is listed as RoHS3 compliant, but the status is unverified and should be confirmed.
The minimum DC current gain (hFE) is 63 at Ic=150mA, Vce=2V.
The maximum Vce saturation is 500mV at Ib=50mA, Ic=500mA.