| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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4,673 pcs
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4673 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Tape & Reel |
The BD138 is a silicon epitaxial planar PNP transistor manufactured by NXP Semiconductors. It is designed for use in audio amplifiers and drivers, particularly in complementary or quasi-complementary circuits. This power transistor comes in a TO-126 plastic package and is suitable for through-hole mounting.
Key electrical specifications include a maximum collector-emitter voltage (Vce max) of 60V and a maximum collector current (Ic) of 1.5A. The power dissipation (Pd) is rated at 1.25W. The DC current gain (hFE) typically ranges from 63 to 160 at an Ic of 150mA. The maximum emitter-base voltage (Veb max) is 5V.
This transistor is part of the BD Series Power Transistors and is an alternative to other BD series parts like BD115, BD130, BD131, BD132, BD135, and BD137. Its robust design makes it suitable for applications requiring moderate power handling and amplification.
Environmental compliance data indicates RoHS3 compliance, an MSL of 1 (Unlimited), and REACH unaffected status. However, these compliance details are based on existing database information and may require verification.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.77 | $0.77 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector current (Ic) for the BD138 is 1.5A.
The maximum collector-emitter voltage (Vce max) for the BD138 is 60V.
The BD138 transistor is supplied in a TO-126 plastic package.
The typical DC current gain (hFE) for the BD138 is between 63 and 160 at an Ic of 150mA.
The BD138 is designed for audio amplifiers and driver circuits.