BD137G

The BD137G from On Semiconductor is a plastic medium-power silicon NPN transistor designed for audio amplifier and driver applications. It features a maximum collector-emitter voltage (VCEO) of 60V, collector-base voltage (VCBO) of 60V, and emitter-base voltage (VEBO) of 5V. The continuous collector current rating is 1.5A, with a base current limit of 0.5A. DC current gain (hFE) is guaranteed minimum 40 at 150mA collector current and 2V VCE, ensuring consistent amplification.

Electrical characteristics include a low collector-emitter saturation voltage of 500mV maximum at 500mA collector current, minimizing power loss. The device is capable of dissipating up to 1.25W at 25°C ambient temperature and 12.5W when mounted on a heatsink at 25°C case temperature. Thermal resistance from junction to case is 10°C/W and junction to ambient is 100°C/W, allowing reliable operation within the -55°C to 150°C junction temperature range.

Packaged in a through-hole TO-225 (TO-126-3) case, the transistor is supplied in boxes of 500 units. It is fully Pb-free, halogen-free/BFR-free, and RoHS3 compliant, meeting current environmental standards. The BD137G is complementary to the PNP types BD136, BD138, and BD140, enabling use in push-pull and complementary output stages.

Typical applications include audio power amplifier output stages, driver circuits, and general-purpose medium-power switching. The robust thermal design and high gain make it suitable for designs requiring reliable performance under moderate power dissipation.