BD13716STU The BD13716STU is an NPN bipolar junction transistor from On Semiconductor, rated for 60V collector-emitter voltage and 1.5A collector current. It comes in a TO-126-3 through-hole package with a maximum power dissipation of 1.25W.
Mfr Part #:

BD13716STU

Available from 3 distributors
Mfr Name: On Semiconductor
On Semiconductor
The BD13716STU is an NPN bipolar junction transistor from On Semiconductor, rated for 60V collector-emitter voltage and 1.5A collector current. It comes in a TO-126-3 through-hole package with a maximum power dissipation of 1.25W.
Total Stock: 24,038 pcs
$ Price Range: $0.49 - $1.22

BD13716STU Available from 3 distributors

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10,826 pcs
10826 pcs On Request 1 On Request On Request 06+ On Request On Request
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10,272 pcs
10272 pcs On Request 1 On Request On Request On Request On Request On Request
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2,940 pcs
2940 pcs On Request 1 On Request On Request On Request On Request On Request

BD13716STU Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Lead Style
Mounting Type
Operating Temperature
Power
Storage Temperature
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

BD13716STU Description

Short technical summary and product information.

The BD13716STU is an NPN bipolar junction transistor manufactured by On Semiconductor. It is designed for general-purpose switching and amplification applications in through-hole assemblies.

 

Key electrical specifications include a maximum collector-emitter voltage of 60V, a maximum collector current of 1.5A, and a maximum power dissipation of 1.25W. The transistor offers a minimum DC current gain (hFE) of 100 at a test condition of 150mA collector current and 2V collector-emitter voltage, and a maximum collector-emitter saturation voltage of 500mV at 50mA base current and 500mA collector current.

 

The device is housed in a TO-225AA / TO-126-3 package with a through-hole mounting style, making it suitable for PCB designs that require manual or wave soldering. The maximum junction operating temperature is 150°C.

 

This transistor is suitable for low-to-medium power switching and linear amplification circuits where the voltage and current ratings are within the specified limits.

BD13716STU Quick Information

Product Type: Bipolar Junction Transistor (BJT)
Series: BD137
Canonical Name: NPN Bipolar Transistor, 60V, 1.5A, TO-126-3
Subcategory: Single

BD13716STU Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

BD13716STU Estimated Pricing

Qty Low High
1+ $1.22 $1.22
10+ $0.55 $0.55
100+ $0.49 $0.49

Estimated market price range - modelled values for guidance only, not live distributor offers.

BD13716STU Features

  • NPN bipolar junction transistor.
  • 60V maximum collector-emitter voltage.
  • 1.5A maximum collector current.
  • 1.25W maximum power dissipation.
  • TO-126-3 through-hole package.

BD13716STU Applications

  • General purpose switching circuits.
  • Low to medium power amplification.
  • Signal amplification in audio stages.
  • Driver stages for relays and solenoids.

BD13716STU FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage of the BD13716STU?

The maximum collector-emitter voltage (Vce) is 60V.

What is the maximum collector current rating?

The maximum collector current (Ic) is 1.5A.

What is the maximum power dissipation?

The maximum power dissipation (Pd) is 1.25W.

What is the package type and mounting style?

The BD13716STU is available in a TO-225AA / TO-126-3 package with through-hole mounting.

What is the maximum junction operating temperature?

The maximum junction operating temperature is 150°C.

What is the minimum DC current gain (hFE) at 150mA and 2V?

The minimum DC current gain (hFE) is 100 at Ic=150mA and Vce=2V.

What is the maximum collector-emitter saturation voltage at 50mA base current and 500mA collector current?

The maximum Vce saturation is 500mV at Ib=50mA and Ic=500mA.

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