BD13716S BD13716S is an NPN bipolar junction transistor from On Semiconductor. It features maximum collector-emitter voltage of 60V, collector current of 1.5A, and power dissipation of 1.25W in a TO-126-3 through-hole package.
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BD13716S

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
BD13716S is an NPN bipolar junction transistor from On Semiconductor. It features maximum collector-emitter voltage of 60V, collector current of 1.5A, and power dissipation of 1.25W in a TO-126-3 through-hole package.
Total Stock: 1,616 pcs
$ Price Range: $0.18 - $0.45

BD13716S Available from 1 distributor

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BD13716S Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Mounting Type
Operating Temperature
Power
Storage Temperature
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

BD13716S Description

Short technical summary and product information.

The BD13716S is an NPN bipolar junction transistor designed for general-purpose switching and amplification applications. Manufactured by On Semiconductor, it provides a balanced combination of voltage and current handling for medium-power circuits.

 

Key electrical specifications include a maximum collector-emitter voltage (Vce) of 60V, maximum collector current (Ic) of 1.5A, and power dissipation (Pd) of 1.25W. The DC current gain (hFE) is guaranteed at a minimum of 100 when tested at Ic=150mA and Vce=2V, ensuring consistent performance. Collector-emitter saturation voltage is limited to 500mV at Ib=50mA and Ic=500mA, contributing to improved efficiency in switching applications.

 

The transistor is housed in a TO-126-3 through-hole package (also compatible with TO-225AA), allowing easy mounting on printed circuit boards. The maximum junction temperature is rated at 150°C, providing a safe operating range for typical environments.

 

Common applications include general-purpose switching stages, driver circuits for relays and solenoids, linear amplification in audio equipment, and medium-speed logic interfaces. The BD13716S is a reliable choice for prototypes, hobbyist projects, and low-volume production where through-hole assembly is preferred.

BD13716S Quick Information

Product Type: Bipolar (BJT) Transistor
Series: BD137
Canonical Name: BD13716S NPN Bipolar Junction Transistor, 60V, 1.5A, TO-126-3
Subcategory: Medium Power NPN Transistor

BD13716S Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

BD13716S Estimated Pricing

Qty Low High
1+ $0.45 $0.45
10+ $0.39 $0.39
100+ $0.29 $0.29
500+ $0.22 $0.22
1,000+ $0.18 $0.18

Estimated market price range - modelled values for guidance only, not live distributor offers.

BD13716S Features

  • NPN transistor with 60V collector-emitter voltage.
  • 1.5A maximum collector current capability.
  • 1.25W power dissipation in TO-126-3 package.
  • Minimum DC current gain of 100 at 150mA.
  • 500mV low saturation voltage for efficiency.

BD13716S Applications

  • General purpose switching and amplification circuits.
  • Medium power driver and line driver stages.
  • Audio amplifier output and preamplifier designs.
  • Relay and solenoid driver applications.
  • Logic interface and signal buffering circuits.

BD13716S FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage (Vce) of BD13716S?

The maximum collector-emitter voltage is 60V.

What is the maximum collector current (Ic) of BD13716S?

The maximum collector current is 1.5A.

What is the power dissipation rating of BD13716S?

The maximum power dissipation is 1.25W.

What is the DC current gain (hFE) of BD13716S?

The minimum DC current gain is 100 at Ic=150mA and Vce=2V.

What is the collector-emitter saturation voltage of BD13716S?

The maximum saturation voltage is 500mV at Ib=50mA and Ic=500mA.

What is the package type of BD13716S?

It is available in TO-225AA and TO-126-3 through-hole packages, with the supplier device package specified as TO-126-3.

What is the maximum operating junction temperature?

The maximum junction temperature is 150°C.

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