BD13710STU NPN bipolar transistor with 60V collector-emitter breakdown and 1.5A collector current. Offered in a TO-126 through-hole package.
Mfr Part #:

BD13710STU

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
NPN bipolar transistor with 60V collector-emitter breakdown and 1.5A collector current. Offered in a TO-126 through-hole package.
Total Stock: 806 pcs
$ Price Range: $0.09 - $0.19

BD13710STU Available from 1 distributor

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806 pcs
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BD13710STU Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Lead Style
Mounting Type
Operating Temperature
Power
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

BD13710STU Description

Short technical summary and product information.

The BD13710STU is an NPN bipolar junction transistor from On Semiconductor. It features a collector-emitter breakdown voltage of 60V, a collector current rating of 1.5A, and a maximum power dissipation of 1.25W. The transistor is housed in a TO-126 through-hole package, suitable for general-purpose switching and amplification in low-power applications.

 

Electrical characteristics include a minimum DC current gain (hFE) of 63 at 150mA collector current and 2V collector-emitter voltage, and a maximum collector-emitter saturation voltage of 500mV at 500mA collector current and 50mA base current. The device has a maximum junction operating temperature of 150°C.

 

This through-hole transistor is designed for applications requiring moderate voltage and current handling, such as driver stages, switching circuits, and audio amplification. The TO-126 package provides a compact, thermally efficient form factor for PCB mounting.

BD13710STU Quick Information

Product Type: Bipolar (BJT) Transistor
Series: BD137
Canonical Name: NPN Bipolar Transistor, 60V, 1.5A, TO-126
Subcategory: Single BJT

BD13710STU Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): Level 1 Unlimited
REACH Status: REACH Unaffected

BD13710STU Estimated Pricing

Qty Low High
1+ $0.12 $0.12
1,000+ $0.19 $0.19
2,280+ $0.09 $0.09
3,840+ $0.12 $0.12
25,000+ $0.09 $0.09
50,000+ $0.09 $0.09

Estimated market price range - modelled values for guidance only, not live distributor offers.

BD13710STU Features

  • NPN bipolar junction transistor.
  • 60V collector-emitter breakdown voltage.
  • 1.5A collector current rating.
  • 1.25W maximum power dissipation.
  • TO-126 through-hole package.

BD13710STU Applications

  • Suitable for general switching circuits.
  • Common in amplifier driver stages.

BD13710STU FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage of the BD13710STU?

The maximum collector-emitter breakdown voltage is 60V.

What package is the BD13710STU available in?

It is available in a TO-126-3 (TO-225AA) through-hole package.

What is the maximum operating junction temperature?

The maximum junction operating temperature is 150°C.

Is the BD13710STU RoHS compliant?

RoHS3 Compliant per existing data, but this is unverified and should be confirmed.

What is the minimum DC current gain (hFE) of the BD13710STU?

The minimum DC current gain is 63, measured at Ic=150mA and Vce=2V.

What is the collector-emitter saturation voltage?

The maximum collector-emitter saturation voltage is 500mV at Ib=50mA and Ic=500mA.

What is the power dissipation rating?

The maximum power dissipation is 1.25W.

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