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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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806 pcs
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806 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | |
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| Supplier Device Package | |
| Tape & Reel | |
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| Vce Saturation (Max) @ Ib, Ic | |
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The BD13710STU is an NPN bipolar junction transistor from On Semiconductor. It features a collector-emitter breakdown voltage of 60V, a collector current rating of 1.5A, and a maximum power dissipation of 1.25W. The transistor is housed in a TO-126 through-hole package, suitable for general-purpose switching and amplification in low-power applications.
Electrical characteristics include a minimum DC current gain (hFE) of 63 at 150mA collector current and 2V collector-emitter voltage, and a maximum collector-emitter saturation voltage of 500mV at 500mA collector current and 50mA base current. The device has a maximum junction operating temperature of 150°C.
This through-hole transistor is designed for applications requiring moderate voltage and current handling, such as driver stages, switching circuits, and audio amplification. The TO-126 package provides a compact, thermally efficient form factor for PCB mounting.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.12 | $0.12 |
| 1,000+ | $0.19 | $0.19 |
| 2,280+ | $0.09 | $0.09 |
| 3,840+ | $0.12 | $0.12 |
| 25,000+ | $0.09 | $0.09 |
| 50,000+ | $0.09 | $0.09 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter breakdown voltage is 60V.
It is available in a TO-126-3 (TO-225AA) through-hole package.
The maximum junction operating temperature is 150°C.
RoHS3 Compliant per existing data, but this is unverified and should be confirmed.
The minimum DC current gain is 63, measured at Ic=150mA and Vce=2V.
The maximum collector-emitter saturation voltage is 500mV at Ib=50mA and Ic=500mA.
The maximum power dissipation is 1.25W.