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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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636 pcs
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636 pcs | On Request | 1 | On Request | On Request | 07+ | On Request | On Request |
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| Tape & Reel | |
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The BD13710S is an NPN bipolar junction transistor manufactured by On Semiconductor. It is designed for general-purpose amplification and switching applications in discrete electronic circuits.
This transistor features a collector-emitter voltage rating of 60V and a collector current capability of 1.5A. It can dissipate up to 1.25W of power. The minimum DC current gain (hFE) is 63 at a test condition of Ic=150mA and Vce=2V, and the maximum collector-emitter saturation voltage is 500mV at Ic=500mA and Ib=50mA.
The device is offered in a TO-225AA / TO-126-3 package and supports through-hole mounting, with a supplier device package of TO-126-3. It is rated for a maximum junction temperature of 150°C and is listed as RoHS3 compliant.
The collector-emitter voltage (Vce) is rated at 60 V.
The BD13710S is available in a TO-225AA / TO-126-3 package, with a supplier device package of TO-126-3.
The maximum junction temperature is 150°C.
The BD13710S is listed as RoHS3 compliant in the database.
The collector current (Ic) is rated at 1.5 A.
The maximum power dissipation is 1.25 W.
The minimum hFE is 63, tested at Ic=150mA and Vce=2V.