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BD13616S PNP epitaxial silicon transistor with 45V maximum collector-emitter voltage and 1.5A continuous collector current. Housed in a TO-126-3 through-hole package.
Mfr Part #:

BD13616S

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
PNP epitaxial silicon transistor with 45V maximum collector-emitter voltage and 1.5A continuous collector current. Housed in a TO-126-3 through-hole package.
✓ Total Stock: 10,000 pcs
$ Price Range: $0.32 - $1.12

BD13616S Available from 1 distributor

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✓ Non-Authorised
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Flip Electronics ✓
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10,000 pcs
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BD13616S Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Mounting Type
Operating Temperature
Power
Storage Temperature
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
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BD13616S Description

Short technical summary and product information.

The BD13616S is a PNP epitaxial silicon bipolar junction transistor from the BD136 series by On Semiconductor (formerly Fairchild Semiconductor). It is designed for medium power linear and switching applications, and is the complementary type to NPN BD135.

 

Key electrical ratings include a maximum collector-emitter voltage (Vceo) of -45V and a continuous collector current (Ic) of -1.5A, with peak pulse current up to -3A. The DC current gain (hFE) is classified as 16, providing a range of 100 to 250 at Ic=150mA, Vce=2V. Maximum power dissipation is 12.5W when the case temperature is held at 25°C.

 

The transistor is supplied in a through-hole TO-225AA / TO-126-3 package with three leads (Emitter, Collector, Base). It is rated for operation with a junction temperature up to 150°C and a storage temperature range of -55°C to 150°C.

BD13616S Quick Information

Product Type: Bipolar Junction Transistor (BJT)
Series: BD136
Canonical Name: On Semiconductor BD13616S PNP Bipolar Transistor
Subcategory: PNP BJT

BD13616S Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

BD13616S Estimated Pricing

Qty Low High
1+ $1.12 $1.12
10+ $0.70 $0.70
100+ $0.46 $0.46
500+ $0.35 $0.35
1,000+ $0.32 $0.32

Estimated market price range - modelled values for guidance only, not live distributor offers.

BD13616S Features

  • PNP epitaxial silicon bipolar transistor.
  • 45V maximum collector-emitter voltage.
  • 1.5A continuous collector current rating.
  • hFE classification 16 (100 to 250).
  • TO-126-3 through-hole package.

BD13616S Applications

  • Medium power linear amplifier circuits.
  • Switching applications up to 1.5A.
  • Complementary pairing with BD135 NPN.

BD13616S FAQs

4 frequently asked questions generated from this part’s specifications.
What is the maximum collector current for the BD13616S?

The maximum continuous collector current is 1.5A DC, with a pulsed current rating of 3.0A.

What is the DC current gain (hFE) of this transistor?

The DC current gain (hFE) is classified as 16, with a range of 100 to 250 at Ic=150mA and Vce=2V. The minimum hFE at Ic=5mA, Vce=2V is 25.

What package does the BD13616S come in?

It comes in a TO-225AA / TO-126-3 through-hole package with three leads (Emitter, Collector, Base).

Is the BD13616S RoHS compliant?

The RoHS status is reported as compliant (RoHS3), but this has not been independently verified.

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