BD13610STU The BD13610STU is a PNP epitaxial silicon transistor from On Semiconductor. It is rated for a collector-emitter breakdown voltage of -45 V and a continuous collector current of -1.5 A.
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BD13610STU

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The BD13610STU is a PNP epitaxial silicon transistor from On Semiconductor. It is rated for a collector-emitter breakdown voltage of -45 V and a continuous collector current of -1.5 A.
Total Stock: 4,811 pcs
$ Price Range: $0.32 - $1.34

BD13610STU Available from 1 distributor

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BD13610STU Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Base Current
Base-Emitter On Voltage
Collector Cut-Off Current
Collector Pulse Current
Collector-Base Breakdown Voltage
Current
DC Current Gain (Minimum @ VCE=-2 V, IC=-0.5 A)
DC Current Gain (Minimum/Maximum @ VCE = -2 V, IC = -5 mA)
DC Current Gain (hFE) (Min) @ Ic, Vce
Emitter Cut-off Current
Emitter-Base Breakdown Voltage
Mounting Type
Operating Temperature
Power
Power Dissipation (Maximum @ Case Temperature = 25 °C)
SVHC Present
Storage Temperature
Storage Temperature Range
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

BD13610STU Description

Short technical summary and product information.

The BD13610STU is a PNP epitaxial silicon bipolar junction transistor manufactured by On Semiconductor. It is designed for medium power linear and switching applications. The transistor features a minimum collector-emitter breakdown voltage (VCEO) of -45 V and a maximum continuous collector current (IC) of -1.5 A, with a pulse current capability of -3 A.

 

Electrical characteristics include a DC current gain (hFE) range of 25 to 250 at VCE = -2 V and IC = -5 mA, and a maximum collector-emitter saturation voltage of -0.5 V at IC = -500 mA and IB = -50 mA. The device can dissipate up to 12.5 W at a case temperature of 25 °C and 1.25 W at an ambient temperature of 25 °C.

 

The BD13610STU is housed in a TO-126-3 (TO-225AA) through-hole package. It has an operating junction temperature range up to 150 °C and a storage temperature range of -55 °C to 150 °C. This transistor is a complement to the NPN types BD135, BD137, and BD139.

BD13610STU Quick Information

Product Type: Bipolar Junction Transistor (BJT)
Series: BD136
Canonical Name: BD13610STU PNP Epitaxial Silicon Transistor
Subcategory: Single Bipolar Junction Transistor

BD13610STU Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

BD13610STU Estimated Pricing

Qty Low High
1+ $1.34 $1.34
10+ $0.61 $0.61
100+ $0.54 $0.54
500+ $0.43 $0.43
1,000+ $0.37 $0.37
1,920+ $0.34 $0.34
5,760+ $0.32 $0.32
11,520+ $0.32 $0.32

Estimated market price range - modelled values for guidance only, not live distributor offers.

BD13610STU Features

  • PNP epitaxial silicon bipolar transistor.
  • Rated for -45 V collector-emitter breakdown.
  • Supports -1.5 A continuous collector current.
  • Housed in a TO-126-3 through-hole package.
  • Maximum power dissipation of 12.5 W.

BD13610STU Applications

  • Used in medium power linear circuits.
  • Suitable for medium power switching applications.
  • Complementary to NPN BD135/137/139 series.

BD13610STU FAQs

5 frequently asked questions generated from this part’s specifications.
What is the collector-emitter breakdown voltage of the BD13610STU?

The minimum collector-emitter breakdown voltage (VCEO) is -45 V.

What is the maximum collector current rating?

The maximum continuous collector current (IC) is -1.5 A, with a pulse current (ICP) rating of -3 A.

What is the package type for the BD13610STU?

The BD13610STU is available in a TO-126-3 (TO-225AA) through-hole package.

What is the operating junction temperature range?

The maximum operating junction temperature is 150 °C, and the storage temperature range is -55 °C to 150 °C.

What is the DC current gain (hFE) of this transistor?

The DC current gain ranges from 25 to 250 at VCE = -2 V and IC = -5 mA.

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