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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
8,740 pcs
|
8740 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Base Current | |
| Base-Emitter On Voltage (Typ @ 0.5A, 2V) | |
| Collector Current (Pulse) | |
| Collector Cut-off Current (Max @ 30V) | |
| Collector Dissipation (Tc=25°C) | |
| Collector-Base Breakdown Voltage (VCBO) | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| DC Current Gain (hFE) (Minimum @ Vce = 2 V, Ic = 5 mA) | |
| DC Current Gain Hfe (Minimum @ VCE=-2 V, IC=-0.5 A) | |
| DC Current Gain Hfe (Minimum/Maximum @ VCE=-2 V, IC=-150 mA) | |
| Emitter Cut-off Current (Max @ 5V) | |
| Emitter-Base Breakdown Voltage (VEBO) | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| SVHC Present | |
| Storage Temperature | |
| Storage Temperature Range | |
| Supplier Device Package | |
| Tape & Reel | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The BD13610S is a PNP epitaxial silicon bipolar transistor manufactured by On Semiconductor, designed for medium power linear and switching applications. It offers a minimum collector-emitter breakdown voltage (VCEO) of 45V and a maximum DC collector current of 1.5A, with pulse current capability up to 3.0A. The device provides a collector dissipation of 12.5W at case temperature 25°C (1.25W at ambient 25°C) and operates over a junction temperature range of -55°C to 150°C.
Key electrical characteristics include a DC current gain (hFE) ranging from 63 to 160 at 150mA and 2V, a collector-emitter saturation voltage of 0.5V maximum at 500mA, and a base-emitter on voltage of 1V maximum. The transistor is housed in a TO-225AA / TO-126-3 through-hole package, with the emitter, collector, and base pins clearly marked.
This transistor is a complementary pair to the NPN BD135, BD137, and BD139 devices. Typical applications include audio output stages, driver circuits, and general purpose medium power switching. The robust design makes it suitable for consumer electronics, industrial controls, and power management systems where reliable PNP switching is required.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.05 | $1.05 |
| 10+ | $0.66 | $0.66 |
| 100+ | $0.43 | $0.43 |
| 500+ | $0.33 | $0.33 |
| 1,000+ | $0.30 | $0.30 |
| 2,000+ | $0.28 | $0.28 |
| 4,000+ | $0.25 | $0.25 |
| 10,000+ | $0.24 | $0.24 |
| 24,000+ | $0.23 | $0.23 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The minimum VCEO is 45V.
The BD13610S is available in a TO-225AA / TO-126-3 through-hole package.
The maximum junction temperature is 150°C.
The component is marked as RoHS3 Compliant, but this status is unverified and should be confirmed from official sources.
The maximum DC collector current is 1.5A, with a pulse current rating of 3.0A.
At 150mA and 2V, the hFE is between 63 and 160 for classification 10.
The maximum VCE(sat) is 0.5V at 500mA collector current and 50mA base current.