BD13610S BD13610S is a PNP epitaxial silicon bipolar transistor from On Semiconductor. It features a 45V collector-emitter breakdown voltage and 1.5A collector current capability in a TO-126-3 through-hole package.
Mfr Part #:

BD13610S

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
BD13610S is a PNP epitaxial silicon bipolar transistor from On Semiconductor. It features a 45V collector-emitter breakdown voltage and 1.5A collector current capability in a TO-126-3 through-hole package.
Total Stock: 8,740 pcs
$ Price Range: $0.23 - $1.05

BD13610S Available from 1 distributor

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BD13610S Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Base Current
Base-Emitter On Voltage (Typ @ 0.5A, 2V)
Collector Current (Pulse)
Collector Cut-off Current (Max @ 30V)
Collector Dissipation (Tc=25°C)
Collector-Base Breakdown Voltage (VCBO)
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
DC Current Gain (hFE) (Minimum @ Vce = 2 V, Ic = 5 mA)
DC Current Gain Hfe (Minimum @ VCE=-2 V, IC=-0.5 A)
DC Current Gain Hfe (Minimum/Maximum @ VCE=-2 V, IC=-150 mA)
Emitter Cut-off Current (Max @ 5V)
Emitter-Base Breakdown Voltage (VEBO)
Mounting Type
Operating Temperature
Power
SVHC Present
Storage Temperature
Storage Temperature Range
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

BD13610S Description

Short technical summary and product information.

The BD13610S is a PNP epitaxial silicon bipolar transistor manufactured by On Semiconductor, designed for medium power linear and switching applications. It offers a minimum collector-emitter breakdown voltage (VCEO) of 45V and a maximum DC collector current of 1.5A, with pulse current capability up to 3.0A. The device provides a collector dissipation of 12.5W at case temperature 25°C (1.25W at ambient 25°C) and operates over a junction temperature range of -55°C to 150°C.

 

Key electrical characteristics include a DC current gain (hFE) ranging from 63 to 160 at 150mA and 2V, a collector-emitter saturation voltage of 0.5V maximum at 500mA, and a base-emitter on voltage of 1V maximum. The transistor is housed in a TO-225AA / TO-126-3 through-hole package, with the emitter, collector, and base pins clearly marked.

 

This transistor is a complementary pair to the NPN BD135, BD137, and BD139 devices. Typical applications include audio output stages, driver circuits, and general purpose medium power switching. The robust design makes it suitable for consumer electronics, industrial controls, and power management systems where reliable PNP switching is required.

BD13610S Quick Information

Product Type: Bipolar Transistor - Single
Series: BD136
Canonical Name: BD13610S
Subcategory: PNP

BD13610S Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

BD13610S Estimated Pricing

Qty Low High
1+ $1.05 $1.05
10+ $0.66 $0.66
100+ $0.43 $0.43
500+ $0.33 $0.33
1,000+ $0.30 $0.30
2,000+ $0.28 $0.28
4,000+ $0.25 $0.25
10,000+ $0.24 $0.24
24,000+ $0.23 $0.23

Estimated market price range - modelled values for guidance only, not live distributor offers.

BD13610S Features

  • PNP epitaxial silicon bipolar transistor.
  • 45V minimum collector-emitter breakdown voltage.
  • 1.5A maximum DC collector current.
  • 12.5W power dissipation at case temperature 25°C.
  • Through-hole TO-126-3 package.

BD13610S Applications

  • Medium power linear and switching applications.
  • Complement to BD135/137/139 NPN transistors.
  • Suitable for audio output stages.
  • Used in general purpose amplifier circuits.

BD13610S FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-emitter breakdown voltage (VCEO) of the BD13610S?

The minimum VCEO is 45V.

What package is the BD13610S available in?

The BD13610S is available in a TO-225AA / TO-126-3 through-hole package.

What is the maximum junction temperature for the BD13610S?

The maximum junction temperature is 150°C.

Is the BD13610S RoHS compliant?

The component is marked as RoHS3 Compliant, but this status is unverified and should be confirmed from official sources.

What is the maximum DC collector current for the BD13610S?

The maximum DC collector current is 1.5A, with a pulse current rating of 3.0A.

What is the DC current gain (hFE) range of the BD13610S?

At 150mA and 2V, the hFE is between 63 and 160 for classification 10.

What is the collector-emitter saturation voltage of the BD13610S?

The maximum VCE(sat) is 0.5V at 500mA collector current and 50mA base current.

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