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BD136 BD136 is a PNP bipolar junction transistor from STMicroelectronics. It features 45V collector-emitter breakdown voltage, 1.5A collector current, and 1.25W power dissipation.
Mfr Part #:

BD136

Available from 2 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
BD136 is a PNP bipolar junction transistor from STMicroelectronics. It features 45V collector-emitter breakdown voltage, 1.5A collector current, and 1.25W power dissipation.
✓ Total Stock: 18,720 pcs
$ Price Range: $0.14 - $1.17

BD136 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Fe Components ✓
Non-Authorised Inventory information
17,200 pcs
On Request
17200 pcs On Request 1 On Request On Request On Request On Request On Request
Optech Co.,Limited ✓
Non-Authorised Inventory information
1,520 pcs
On Request
1520 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

BD136 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Mounting Type
Operating Temperature
Power
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
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BD136 Description

Short technical summary and product information.

BD136 is a PNP bipolar junction transistor (BJT) designed for general purpose switching and amplification applications. Manufactured by STMicroelectronics, it offers reliable performance in medium power circuits.

 

Electrical specifications include a minimum collector-emitter breakdown voltage (Vceo) of 45V, a maximum collector current (Ic) of 1.5A, and a maximum power dissipation of 1.25W. The DC current gain (hFE) is at least 40 when tested at Ic=150mA and Vce=2V, and the collector-emitter saturation voltage (Vce sat) is a maximum of 500mV at Ib=50mA and Ic=500mA.

 

The transistor is housed in a through-hole package with options TO-225AA and TO-126-3, and the supplier device package is SOT-32-3. It can operate at junction temperatures up to 150°C.

 

Typical applications include general purpose switching, linear amplification, and driver stages in consumer and industrial electronics.

BD136 Quick Information

Product Type: Bipolar (BJT) Transistor
Canonical Name: BD136 PNP Bipolar Transistor
Subcategory: Single PNP

BD136 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

BD136 Estimated Pricing

Qty Low High
1+ $1.17 $1.17
10+ $0.85 $0.85
100+ $0.59 $0.59
500+ $0.32 $0.32
1,000+ $0.23 $0.23
2,000+ $0.21 $0.21
4,000+ $0.19 $0.19
10,000+ $0.18 $0.18
24,000+ $0.14 $0.14

Estimated market price range - modelled values for guidance only, not live distributor offers.

BD136 Features

  • PNP bipolar junction transistor.
  • 45V collector-emitter breakdown voltage.
  • 1.5A maximum collector current.
  • 1.25W power dissipation capability.
  • Through-hole SOT-32-3 package.

BD136 Applications

  • General purpose switching circuits.
  • Linear amplification applications.
  • Medium power driver stages.

BD136 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-emitter breakdown voltage of BD136?

Minimum 45V.

What is the maximum collector current?

1.5A.

What is the power dissipation rating?

1.25W.

What is the package type?

TO-225AA, TO-126-3, and supplier package SOT-32-3.

What is the operating junction temperature?

Maximum 150°C.

Is BD136 RoHS compliant?

Yes, RoHS3 compliant (unverified).

What is the DC current gain (hFE)?

Minimum 40 at Ic=150mA, Vce=2V.

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