Mfr Part #:

BD135G

The BD135G is an NPN medium-power silicon transistor from ON Semiconductor. It features a 45V collector-emitter voltage, 1.5A collector current, and comes in a TO-126 through-hole package.

✓ Total Stock: 10,390 pcs

$ Price Range: $0.49 - $1.18

BD135G Available from 2 distributors

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Flip Electronics ✓ Non-Authorised Inventory information	9,500 pcs On Request	9500 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Smaxon Electronics ✓ Non-Authorised Inventory information	890 pcs On Request	890 pcs	On Request	1	On Request	On Request	0919+	On Request	On Request

BD135G Description

Short technical summary and product information.

The BD135G is part of ON Semiconductor's series of plastic medium-power silicon NPN transistors designed for audio amplification and driver applications. With a maximum collector-emitter voltage of 45V and continuous collector current of 1.5A, it can dissipate up to 12.5W at case temperature 25°C. The device offers a wide DC current gain range from 40 to 250 at typical operating points.

The TO-126 through-hole package provides reliable thermal performance with a junction-to-case thermal resistance of 10°C/W. The part is RoHS compliant, Pb-Free, and Halogen-Free, suitable for environmentally conscious designs. Its complementary PNP counterparts include BD136G, BD138G, and BD140G.

Designed for medium-power applications, the BD135G operates over a junction temperature range of -55°C to 150°C. The collector-emitter saturation voltage is typically 500mV at 500mA, ensuring efficient switching in driver circuits.

BD135G Quick Information

Product Type: Bipolar Junction Transistor (BJT) — Single

Series: BD135/137/139

Canonical Name: ONSEMI BD135G NPN Bipolar Transistor, 45V VCEO, 1.5A IC, TO-126

Subcategory: Medium Power Transistor

BD135G Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

Lead Free: Yes

BD135G Estimated Pricing

Qty	Low	High
1+	$1.18	$1.18
10+	$0.74	$0.74
100+	$0.49	$0.49

Estimated market price range - modelled values for guidance only, not live distributor offers.

BD135G Features

NPN silicon transistor with 45V VCEO rating.
Continuous collector current up to 1.5A.
Maximum power dissipation of 12.5W at case.
RoHS compliant, Pb-Free, and Halogen-Free.
Through-hole TO-126 package for easy mounting.

BD135G Applications

Used in audio amplifier output stages.
Ideal for driver circuits in power supplies.
Suitable for general purpose switching applications.
Complementary to PNP BD136G transistor.

BD135G FAQs

5 frequently asked questions generated from this part’s specifications.

What is the maximum collector-emitter voltage of BD135G?

The maximum collector-emitter voltage (VCEO) is 45V.

What package does BD135G come in?

It comes in a TO-126 through-hole package (also known as TO-225AA).

What is the operating temperature range of BD135G?

The operating junction temperature range is -55°C to 150°C.

Is BD135G RoHS compliant?

Yes, it is RoHS3 compliant, Pb-Free, and Halogen-Free.

What is the DC current gain (hFE) of BD135G?

Minimum DC current gain is 40 at IC=150mA, VCE=2V, with a typical range up to 250.

Category	Transistors - Bipolar (BJT) - Single
Manufacturer Name	On Semiconductor
Current	1.5 A
DC Current Gain (hFE) (Min) @ Ic, Vce	40 @ 150mA, 2V
Halogen Free	Yes
Lead Style	Through Hole
Medical Grade	Yes
Mounting Type	Through Hole
Operating Temperature	-55°C ~ 150°C (TJ)
Power	1.25 W
SVHC Present	Not Present
Storage Temperature	-55.0°C ~ 150.0°C
Supplier Device Package	TO-126
Tape & Reel	No
Termination Style	Through Hole
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	500 mV
Voltage	45 V