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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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1,170 pcs
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1170 pcs | On Request | 1 | On Request | On Request | 19+ | On Request | On Request |
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The BD1356STU is an NPN bipolar junction transistor manufactured by On Semiconductor. It is designed for general-purpose switching and amplification applications.
Key electrical specifications include a collector-emitter voltage (Vceo) of 45V, a continuous collector current (Ic) of 1.5A, and a power dissipation (Pd) of 1.25W. The transistor offers a minimum DC current gain (hFE) of 40 at 150mA collector current and 2V collector-emitter voltage. The maximum collector-emitter saturation voltage (Vce(sat)) is 500mV at a base current of 50mA and collector current of 500mA.
The device is housed in a through-hole TO-225AA / TO-126-3 package, suitable for PCB mounting. The maximum junction temperature is 150°C.
The collector-emitter voltage (Vceo) is 45V.
The maximum continuous collector current (Ic) is 1.5A.
The power dissipation (Pd) is 1.25W.
The BD1356STU is available in a through-hole TO-225AA / TO-126-3 package.
The maximum junction temperature (Tj) is 150°C.
The BD1356STU is listed as RoHS3 compliant, but this status is unverified.