| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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700 pcs
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700 pcs | On Request | 1 | On Request | On Request | 2026-02-25 06:16:38 | On Request | On Request |
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The BD135 from Philips is a versatile NPN power transistor housed in a TO-126 plastic package. It is suitable for applications such as driver stages in hi-fi amplifiers and television circuits.
Key electrical characteristics include a maximum collector-emitter voltage (VCEO) of 45V and a continuous collector current (IC) of up to 1.5A. The peak collector current (ICM) can reach 2A. DC current gain (hFE) ranges from 40 to 250 depending on the specific model and operating conditions.
This transistor also offers a transition frequency (fT) of 190 MHz at 50 mA and 5V. The power dissipation (Ptot) is rated at 8W at a mounting base temperature of 70°C. Thermal resistance from junction to mounting base (Rth j-mb) is 10 K/W.
The BD135 is designed for through-hole mounting. Its PNP complement is the BD136.
| Qty | Low | High |
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| 1+ | $0.09 | $0.09 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) is 45V.
The maximum continuous collector current (IC) is 1.5A, with a peak current (ICM) of 2A.
The total power dissipation (Ptot) is 8W at a mounting base temperature of 70°C.
The operating ambient temperature range is -65°C to +150°C.
The BD135 is available in TO-126 and SOT-32 through-hole packages.
At IC=150mA and VCE=2V, the hFE ranges from 40 to 250.
The typical transition frequency (fT) is 190 MHz at IC=50mA and VCE=5V.