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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
23 pcs
|
23 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Base Current (IB) | |
| Collector Current (Ic) | |
| Collector Cutoff Current (Maximum @ Vcb=30 V, IE=0) | |
| Collector Cutoff Current (Maximum @ Vcb=30 V, IE=0, TC=125 °C) | |
| Collector-Base Voltage (VCBO) | |
| Collector-Emitter Voltage (VCEO) | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| DC Current Gain (hFE) (Minimum @ Ic = 500 mA, Vce = 2 V) | |
| DC Current Gain (hFE) (Minimum @ Ic=5 mA, Vce=2 V) | |
| DC Current Gain (hFE) (Minimum/Maximum @ Ic=150 mA, Vce=2 V) | |
| Emitter Cutoff Current (Iebo) @ Vbe=5V | |
| Emitter-Base Voltage (VEBO) | |
| Halogen Free | |
| Medical Grade | |
| Mounting Type | |
| Operating Junction Temperature Range | |
| Operating Temperature | |
| Power | |
| Power Dissipation (Maximum @ TC=25 °C) | |
| Power Dissipation (Maximum) @ TA=25°C | |
| SVHC Present | |
| Standard Package Qty | |
| Supplier Device Package | |
| Thermal Resistance Junction to Ambient (RθJA) | |
| Thermal Resistance Junction-to-Case (RθJC) | |
| Transistor Type | |
| Vbe(on) (Max) @ Ic=500mA, Vce=2V | |
| Vce Saturation (Max) @ Ib, Ic | |
| Vce Saturation (Max) @ Ib=50mA, Ic=500mA | |
| Voltage |
The BD135 is a plastic medium-power NPN silicon transistor designed by On Semiconductor for general purpose amplifier and driver applications. It is rated for a collector-emitter voltage of 45 V, a maximum collector current of 1.5 A, and a power dissipation of 12.5 W when the case temperature is held at 25°C. The device is offered in a TO-225AA (TO-126-3) through-hole package, making it suitable for audio amplifiers, driver stages, and other medium-power linear circuits.
The transistor features high DC current gain, with a minimum of 40 at 150 mA collector current, and a low collector-emitter saturation voltage of 500 mV at 500 mA. It is complementary to the BD136, BD138, and BD140 PNP transistors, allowing straightforward implementation of complementary output stages. The part is Pb-free, halogen-free, and RoHS compliant.
For thermal management, the device has a junction-to-case thermal resistance of 10 °C/W and an operating junction temperature range of -55°C to +150°C. The standard shipping configuration is 500 units per box (Pb-free variant).
| Qty | Low | High |
|---|---|---|
| 1+ | $1.82 | $1.82 |
| 50+ | $0.87 | $0.87 |
| 100+ | $0.77 | $0.77 |
| 500+ | $0.61 | $0.61 |
| 1,000+ | $0.56 | $0.56 |
| 2,000+ | $0.51 | $0.51 |
| 5,000+ | $0.47 | $0.47 |
| 10,000+ | $0.44 | $0.44 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage rating is 45 V.
The maximum continuous collector current is 1.5 A.
The BD135 is available in a TO-225AA (TO-126-3) through-hole package.
The junction temperature range is -55°C to 150°C.
Yes, the BD135 is RoHS3 compliant, Pb-Free, and Halogen Free.
The DC current gain is 40 to 250 at Ic=150 mA, Vce=2 V.
Power dissipation is 12.5 W at case temperature 25°C, and 1.25 W at ambient 25°C.