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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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2,336 pcs
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2336 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | |
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| Tape & Reel | |
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| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The BCY59VIII is an NPN bipolar junction transistor manufactured by STMicroelectronics. It is designed for general-purpose switching and amplification applications. The transistor has a maximum collector-emitter breakdown voltage (Vceo) of 45V and can handle a continuous collector current (Ic) of up to 200mA. Maximum power dissipation is 390mW. The DC current gain (hFE) is typically 180 at Ic=2mA and Vce=5V. The saturation voltage (Vce(sat)) is 700mV at Ib=2.5mA and Ic=100mA. The transition frequency (fT) is 200MHz. The device can operate at junction temperatures up to 175°C.
It is housed in a TO-18 metal can package (TO-206AA, TO-18-3) with through-hole mounting, suitable for socket or direct board mounting. The part is suitable for low-power driver stages, signal processing, and switching circuits where a compact, reliable NPN transistor is required.
| Qty | Low | High |
|---|---|---|
| 3,000+ | $0.33 | $0.33 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter breakdown voltage (Vceo) is 45V.
The maximum collector current (Ic) is 200mA.
It is available in a TO-18 metal can package (TO-206AA, TO-18-3).
The maximum junction operating temperature is 175°C.
The part is marked as RoHS3 compliant, but this data is unverified and low confidence.
The minimum hFE is 180 at Ic=2mA and Vce=5V.
The transition frequency (fT) is 200MHz.