BCY59VIII The BCY59VIII is an NPN bipolar junction transistor from STMicroelectronics. It features a 45V collector-emitter breakdown voltage, 200mA collector current, and 390mW power dissipation in a TO-18 package.
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BCY59VIII

Available from 1 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
The BCY59VIII is an NPN bipolar junction transistor from STMicroelectronics. It features a 45V collector-emitter breakdown voltage, 200mA collector current, and 390mW power dissipation in a TO-18 package.
Total Stock: 2,336 pcs
$ Price Range: $0.33

BCY59VIII Available from 1 distributor

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BCY59VIII Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Mounting Type
Operating Temperature
Power
Storage Temperature
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

BCY59VIII Description

Short technical summary and product information.

The BCY59VIII is an NPN bipolar junction transistor manufactured by STMicroelectronics. It is designed for general-purpose switching and amplification applications. The transistor has a maximum collector-emitter breakdown voltage (Vceo) of 45V and can handle a continuous collector current (Ic) of up to 200mA. Maximum power dissipation is 390mW. The DC current gain (hFE) is typically 180 at Ic=2mA and Vce=5V. The saturation voltage (Vce(sat)) is 700mV at Ib=2.5mA and Ic=100mA. The transition frequency (fT) is 200MHz. The device can operate at junction temperatures up to 175°C.

 

It is housed in a TO-18 metal can package (TO-206AA, TO-18-3) with through-hole mounting, suitable for socket or direct board mounting. The part is suitable for low-power driver stages, signal processing, and switching circuits where a compact, reliable NPN transistor is required.

BCY59VIII Quick Information

Product Type: Bipolar Junction Transistor (BJT)
Series: BCY59
Canonical Name: BCY59VIII NPN Transistor
Subcategory: Single NPN

BCY59VIII Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

BCY59VIII Estimated Pricing

Qty Low High
3,000+ $0.33 $0.33

Estimated market price range - modelled values for guidance only, not live distributor offers.

BCY59VIII Features

  • NPN bipolar junction transistor for general purpose.
  • 45V collector-emitter breakdown voltage.
  • 200mA maximum collector current.
  • 390mW power dissipation capability.
  • 200MHz transition frequency.

BCY59VIII Applications

  • General purpose switching and amplification.
  • Suitable for low-power driver stages.
  • Used in through-hole board designs.

BCY59VIII FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-emitter breakdown voltage of the BCY59VIII?

The maximum collector-emitter breakdown voltage (Vceo) is 45V.

What is the maximum collector current for this transistor?

The maximum collector current (Ic) is 200mA.

What is the package type of the BCY59VIII?

It is available in a TO-18 metal can package (TO-206AA, TO-18-3).

What is the operating temperature range?

The maximum junction operating temperature is 175°C.

Is the BCY59VIII RoHS compliant?

The part is marked as RoHS3 compliant, but this data is unverified and low confidence.

What is the DC current gain (hFE) of this transistor?

The minimum hFE is 180 at Ic=2mA and Vce=5V.

What is the transition frequency?

The transition frequency (fT) is 200MHz.

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