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BCY59IX The BCY59IX is an NPN silicon planar epitaxial transistor from STMicroelectronics. It features a 45V collector-emitter breakdown voltage and 200mA collector current capability.
Mfr Part #:

BCY59IX

Available from 2 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
The BCY59IX is an NPN silicon planar epitaxial transistor from STMicroelectronics. It features a 45V collector-emitter breakdown voltage and 200mA collector current capability.
✓ Total Stock: 6,389 pcs
$ Price Range: $0.32

BCY59IX Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Components Technology Group, Inc. ✓
Non-Authorised Inventory information
6,358 pcs
On Request
6358 pcs On Request 1 On Request On Request On Request On Request On Request
Partservice ✓
Non-Authorised Inventory information
31 pcs
On Request
31 pcs On Request 1 On Request On Request On Request On Request On Request
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BCY59IX Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Industrial Grade
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Power
SVHC Present
Storage Temperature
Supplier Device Package
Tape & Reel
Termination Style
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
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BCY59IX Description

Short technical summary and product information.

The BCY59IX is an NPN silicon planar epitaxial transistor manufactured by STMicroelectronics, housed in a JEDEC TO-18 metal can package. It is designed for use in audio input stages, driver stages, and low-noise input stages.

 

Key electrical specifications include a maximum collector-emitter voltage of 45V, a maximum collector current of 200mA, and a maximum power dissipation of 390mW at 25°C ambient temperature. The device offers a DC current gain (hFE) of 250 to 500 for group IX at 2mA and 5V, with a typical gain of 350. It has a transition frequency of 200 MHz minimum.

 

The transistor is mounted using through-hole technology and is RoHS3 compliant. The PNP complementary type is the BCY79.

BCY59IX Quick Information

Product Type: Bipolar Junction Transistor (BJT)
Series: BCY59
Canonical Name: STMicroelectronics BCY59IX NPN Silicon Planar Epitaxial Transistor
Subcategory: Single Bipolar Junction Transistor

BCY59IX Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected

BCY59IX Estimated Pricing

Qty Low High
3,000+ $0.32 $0.32

Estimated market price range - modelled values for guidance only, not live distributor offers.

BCY59IX Features

  • NPN silicon planar epitaxial transistor.
  • 45V collector-emitter breakdown voltage.
  • 200mA maximum collector current.
  • 200 MHz minimum transition frequency.
  • TO-18 metal can through-hole package.

BCY59IX Applications

  • Used in audio input stage circuits.
  • Suitable for low-noise amplifier designs.
  • Ideal for general-purpose driver stages.

BCY59IX FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the BCY59IX?

The maximum collector-emitter voltage (VCEO) is 45V.

What is the maximum collector current rating?

The maximum collector current (IC) is 200mA.

What is the package type for the BCY59IX?

The BCY59IX is housed in a TO-206AA, TO-18-3 metal can package (TO-18).

What is the operating junction temperature range?

The maximum operating junction temperature is 175°C, and the storage temperature range is -55°C to 175°C.

Is the BCY59IX RoHS compliant?

The BCY59IX is listed as RoHS3 compliant, though this is unverified.

What is the DC current gain (hFE) for the BCY59IX?

For group IX, the DC current gain (hFE) at 2mA and 5V is minimum 250, typical 350, and maximum 500.

What is the transition frequency of the BCY59IX?

The minimum transition frequency (ft) is 200 MHz at 10mA and 5V.

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