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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,275 pcs
|
2275 pcs | On Request | 1 | On Request | On Request | 2001 | On Request | On Request |
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| Manufacturer Name | |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | |
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| Power | |
| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The BCX71JLT1 is a PNP bipolar junction transistor from On Semiconductor, designed for general-purpose switching and amplification in low-power applications. It features a maximum collector-emitter voltage of 45V and a maximum collector current of 100mA, with a power dissipation rating of 350mW.
This transistor offers a minimum DC current gain (hFE) of 250 at Ic=2mA and Vce=5V, and a maximum collector-emitter saturation voltage of 550mV at Ib=1.25mA and Ic=50mA. These characteristics make it suitable for signal amplification and low-current switching tasks.
The device is housed in a compact SOT-23-3 (TO-236) surface-mount package, which is ideal for space-constrained PCB designs. Its surface-mount configuration supports automated assembly processes, making it a practical choice for high-volume production.
| Qty | Low | High |
|---|---|---|
| 21,000+ | $0.03 | $0.03 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage is 45V.
The maximum collector current is 100mA.
The maximum power dissipation is 350mW.
The BCX71JLT1 is available in a surface-mount SOT-23-3 (TO-236) package.
The minimum DC current gain (hFE) is 250 at Ic=2mA and Vce=5V.
The maximum collector-emitter saturation voltage is 550mV at Ib=1.25mA and Ic=50mA.
The BCX71JLT1 is marked as RoHS3 compliant, but this status is unverified and should be confirmed from the official datasheet.