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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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310 pcs
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310 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
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| Supplier Device Package | |
| Tape & Reel | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The BCX70G is an NPN bipolar junction transistor manufactured by ON Semiconductor (formerly Fairchild Semiconductor). It is designed for general-purpose amplification and switching applications in low-power circuits.
Key electrical specifications include a maximum collector-emitter breakdown voltage of 45V, a maximum collector current of 200mA, and a maximum power dissipation of 350mW. The device offers a minimum DC current gain (hFE) of 120 at a test condition of Ic=2mA and Vce=5V, and a typical transition frequency of 125MHz. The maximum collector-emitter saturation voltage is 550mV at Ib=1.25mA and Ic=50mA.
The transistor is housed in a TO-236-3 / SC-59 / SOT-23-3 surface-mount package, making it suitable for compact PCB designs. It is recommended for use in low-power signal amplification, driver stages, and general-purpose switching circuits where high gain and moderate frequency performance are required.
The maximum collector-emitter breakdown voltage is 45V.
The maximum collector current rating is 200mA.
The minimum DC current gain is 120, measured at Ic=2mA and Vce=5V.
The BCX70G is available in a TO-236-3 / SC-59 / SOT-23-3 surface-mount package, with supplier device package SOT-23-3.
RoHS compliance is indicated as RoHS3 compliant, though this data is unverified.