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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
26,000 pcs
|
26000 pcs | On Request | 1 | On Request | On Request | 1448+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Industrial Grade | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Tape & Reel | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The BCX68-16E6327 is a small signal bipolar junction transistor manufactured by Infineon Technologies. It is designed for general-purpose switching and amplification applications in discrete semiconductor circuits.
Key electrical characteristics include a collector current rating of 1A, a collector-emitter breakdown voltage of 20V, and a power dissipation of 3W. The transistor offers a minimum DC current gain (hFE) of 100 at a test condition of 500mA collector current and 1V collector-emitter voltage, and a maximum Vce saturation voltage of 500mV at 100mA base current and 1A collector current. The transition frequency is 100MHz, making it suitable for moderate-speed switching applications.
The device is packaged in a TO-243AA surface-mount package (supplier device package PG-SOT89-4-2) and is designed for surface-mount assembly. The operating junction temperature is rated up to 150°C.
This transistor is suitable for use in a variety of low-power switching and amplification circuits where a 1A collector current and 20V breakdown voltage are sufficient. Its surface-mount package enables compact PCB designs.
The maximum collector current is 1A.
The collector-emitter breakdown voltage is 20V.
The power dissipation is 3W.
The operating junction temperature is rated up to 150°C.
The BCX68-16E6327 is available in a TO-243AA surface-mount package (supplier device package PG-SOT89-4-2).
The minimum DC current gain (hFE) is 100 at a test condition of 500mA collector current and 1V collector-emitter voltage.
The transition frequency is 100MHz.