BCX56-16147 NPN medium power transistor, 80V collector-emitter voltage, 1A collector current, in SOT89 surface mount package.
Mfr Part #:

BCX56-16147

Available from 1 distributors
Mfr Name: NXP Semiconductors
NXP Semiconductors
NPN medium power transistor, 80V collector-emitter voltage, 1A collector current, in SOT89 surface mount package.
Total Stock: 12,020 pcs

BCX56-16147 Available from 1 distributor

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BCX56-16147 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Ambient Temperature Range
Base Current
Body Dimensions
Collector Current
Collector-Base Voltage
Collector-Emitter Voltage
DC Current Gain (hFE)
Emitter-Base Voltage
Junction Temperature
Lead Spacing
Mounting Type
Number of Leads
Peak Base Current
Peak Collector Current
Polarity
Storage Temperature
Storage Temperature Range
Tape & Reel
Termination Style
Total Power Dissipation (Maximum @ T_amb ≤ 25 °C, FR 4 PCB standard footprint)
Total Power Dissipation (Maximum @ T_amb ≤ 25 °C; FR 4 PCB, mounting pad for collector 1 cm²)
Total Power Dissipation (Maximum @ T_amb ≤ 25 °C; FR 4 PCB, mounting pad for collector 6 cm²)

BCX56-16147 Description

Short technical summary and product information.

The BCX56-16147 is an NPN medium power transistor from NXP Semiconductors, designed for general-purpose switching and amplification applications. It features a maximum collector-emitter voltage of 80V and a continuous collector current of 1A, with a peak current capability of 2A. The DC current gain (hFE) for the BCX56-16 gain selection ranges from 100 to 250 at VCE = 2V and IC = 150mA.

 

Power dissipation depends on the PCB copper area: 0.50W with a standard footprint, 0.95W with a 1 cm² collector pad, and up to 1.35W with a 6 cm² pad. The device is housed in a SOT89 (SC-62) surface-mount package with flat leads, measuring 4.5 mm x 2.5 mm x 1.5 mm. It operates over a junction temperature range of -55°C to 150°C.

 

Typical applications include linear voltage regulators, MOSFET drivers, low-side switches, battery-driven devices, power management, and amplifiers. The transistor is RoHS3 compliant (unverified) and has an MSL rating of 1 (unlimited).

BCX56-16147 Quick Information

Product Type: NPN Medium Power Transistor
Series: BCX56
Canonical Name: BCX56-16 NPN Medium Power Transistor
Subcategory: NPN Medium Power

BCX56-16147 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

BCX56-16147 Features

  • NPN medium power transistor with 80V VCEO.
  • High collector current capability up to 1A.
  • Three gain selections available.
  • Surface mount SOT89 package.
  • Power dissipation up to 1.35W.

BCX56-16147 Applications

  • Used in linear voltage regulators.
  • Ideal for MOSFET driver circuits.
  • Suitable for low-side switching.
  • Used in battery-powered devices.
  • Applied in power management systems.

BCX56-16147 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-emitter voltage rating?

80V maximum (open base).

What is the collector current rating?

1A continuous, 2A peak (single pulse, tp ≤ 1 ms).

What is the DC current gain (hFE) for BCX56-16?

100 to 250 at VCE = 2V, IC = 150mA (pulsed).

What package is this transistor available in?

SOT89 (SC-62) surface mount package with flat leads.

What is the operating temperature range?

-55°C to 150°C ambient.

Is this component RoHS compliant?

RoHS3 compliant (unverified, low confidence).

What is the power dissipation?

0.50W standard footprint, 0.95W with 1 cm² pad, 1.35W with 6 cm² pad.

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