BCX56-16115 BCX56-16115 is an NPN medium power transistor from NXP Semiconductors, rated for 80V collector-emitter voltage and 1A continuous collector current. It offers a DC current gain range of 100-250 and comes in a surface-mount SOT-89 package.
Mfr Part #:

BCX56-16115

Available from 3 distributors
Mfr Name: NXP Semiconductors
NXP Semiconductors
BCX56-16115 is an NPN medium power transistor from NXP Semiconductors, rated for 80V collector-emitter voltage and 1A continuous collector current. It offers a DC current gain range of 100-250 and comes in a surface-mount SOT-89 package.
Total Stock: 2,062,360 pcs

BCX56-16115 Available from 3 distributors

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BCX56-16115 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Base Current (IB)
Collector-Base Voltage (VCBO)
Current
DC Current Gain (Minimum/Maximum @ VCE=2 V, IC=150 mA)
DC Current Gain (hFE) (Min) @ Ic, Vce
Emitter-Base Voltage (VEBO)
Frequency
Mounting Type
Operating Temperature
Operating Temperature Range (Tamb)
Peak Base Current (IBM)
Peak Collector Current (ICM)
Power
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

BCX56-16115 Description

Short technical summary and product information.

The BCX56-16115 is an NPN medium power transistor designed for general-purpose switching and linear applications. It features a maximum collector-emitter voltage of 80 V and a continuous collector current rating of 1 A, with a peak current capability of 2 A. The transistor provides a DC current gain (hFE) of 100 to 250 at VCE = 2 V, IC = 150 mA, ensuring consistent performance across operating conditions. The collector-emitter saturation voltage is typically 500 mV at IC = 500 mA and IB = 50 mA, enabling efficient low-voltage switching.

 

With a transition frequency of 180 MHz, this device is suitable for medium-frequency amplifier stages and power management circuits. It can dissipate up to 500 mW under standard FR4 PCB conditions and operates over a junction temperature range of -55°C to 150°C. The BCX56-16115 is packaged in a TO-243AA (SOT-89) surface-mount package, which offers a compact footprint for space-constrained designs. This transistor is commonly used in linear voltage regulators, MOSFET drivers, low-side switches, battery-driven devices, and general power management.

BCX56-16115 Quick Information

Product Type: Bipolar Junction Transistor (BJT)
Series: BCX56
Canonical Name: BCX56-16115
Subcategory: Medium Power Transistor

BCX56-16115 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

BCX56-16115 Features

  • NPN medium power bipolar transistor.
  • 80V collector-emitter breakdown voltage.
  • 1A continuous collector current rating.
  • DC current gain of 100 to 250.
  • Surface-mount SOT-89 package.

BCX56-16115 Applications

  • Linear voltage regulators.
  • MOSFET driver circuits.
  • Low-side switching applications.
  • Battery-powered device management.
  • General purpose power management.

BCX56-16115 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the operating temperature range of the BCX56-16115?

The operating ambient temperature range is -55°C to 150°C, with a maximum junction temperature of 150°C.

What package does the BCX56-16115 come in?

It comes in a surface-mount SOT-89 package, also designated as TO-243AA.

Is the BCX56-16115 RoHS compliant?

It is listed as RoHS3 Compliant in the database, but this status is unverified and should be confirmed with the manufacturer.

What is the DC current gain (hFE) range for the BCX56-16115?

The DC current gain ranges from 100 to 250 at VCE = 2 V and IC = 150 mA.

What is the collector-emitter saturation voltage of the BCX56-16115?

The maximum collector-emitter saturation voltage is 500 mV at IB = 50 mA and IC = 500 mA.

What is the transition frequency of the BCX56-16115?

The typical transition frequency is 180 MHz.

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