BCX5316TA PNP medium power transistor with 80V collector-emitter breakdown voltage and 1A continuous collector current. Surface mount in SOT89-3 package.
Mfr Part #:

BCX5316TA

Available from 3 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
PNP medium power transistor with 80V collector-emitter breakdown voltage and 1A continuous collector current. Surface mount in SOT89-3 package.
✓ Total Stock: 319,847 pcs
$ Price Range: $0.12 - $0.54

BCX5316TA Available from 3 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
318,020 pcs
318020 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
1,752 pcs
1752 pcs On Request 1 On Request On Request 1630+ On Request On Request
Non-Authorised Inventory information
75 pcs
75 pcs On Request 1 On Request On Request On Request On Request On Request

BCX5316TA Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Halogen Free
Lead Style
Mounting Type
Operating Temperature
Power
SVHC Present
Storage Temperature
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

BCX5316TA Description

Short technical summary and product information.

The BCX5316TA is a PNP medium power transistor from Diodes Incorporated, designed for medium power switching and amplification applications. It features a collector-emitter breakdown voltage (VCEO) of -80V, collector-base breakdown voltage (VCBO) of -100V, and emitter-base breakdown voltage (VEBO) of -5V. The continuous collector current (IC) is -1A, with a peak pulse current (ICM) of -2A. Power dissipation is rated at 1W. DC current gain (hFE) is a minimum of 100 at Ic=150mA, Vce=2V, and the collector-emitter saturation voltage (VCEsat) is a maximum of -500mV at Ib=50mA, Ic=500mA. Transition frequency (ft) is 150MHz. The device operates over a junction temperature range of -65°C to 150°C.

 

The BCX5316TA is housed in a SOT89-3 surface mount package (TO-243AA) and is supplied in tape and reel packaging with 1000 pieces per reel. It is fully RoHS3 compliant, lead-free, and halogen-free (green device). Typical applications include medium power switching, AF driver and output stages, and general purpose amplification circuits.

BCX5316TA Quick Information

Product Type: Bipolar Transistor - Single
Series: BCX53
Canonical Name: BCX5316TA PNP Medium Power Transistor
Subcategory: PNP Medium Power

BCX5316TA Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): Level 1 (Unlimited)
REACH Status: REACH Unaffected
Lead Free: Lead-Free

BCX5316TA Estimated Pricing

Qty Low High
1+ $0.54 $0.54
10+ $0.30 $0.30
100+ $0.21 $0.21
500+ $0.18 $0.18
1,000+ $0.12 $0.12

Estimated market price range - modelled values for guidance only, not live distributor offers.

BCX5316TA Features

  • PNP medium power transistor in SOT89-3 package.
  • 80V collector-emitter breakdown voltage.
  • 1A continuous collector current.
  • Low saturation voltage of -500mV.
  • RoHS compliant and halogen-free.

BCX5316TA Applications

  • Medium power switching and amplification circuits.
  • AF driver and output stages.
  • General purpose medium power applications.

BCX5316TA FAQs

6 frequently asked questions generated from this part’s specifications.
What is the collector-emitter breakdown voltage of BCX5316TA?

The maximum collector-emitter breakdown voltage (VCEO) is -80V.

What package does BCX5316TA come in?

It is available in a SOT89-3 surface mount package (TO-243AA).

What is the operating temperature range?

The operating junction temperature range is -65°C to 150°C.

Is BCX5316TA RoHS compliant?

Yes, it is RoHS3 compliant and lead-free.

What is the DC current gain (hFE) of BCX5316TA?

The minimum DC current gain is 100 at Ic=150mA, Vce=2V.

What is the saturation voltage of BCX5316TA?

The maximum collector-emitter saturation voltage is -500mV at Ib=50mA, Ic=500mA.

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