BCX52E6327 Small signal bipolar transistor from Infineon Technologies. Features 60V collector-emitter breakdown voltage, 1A collector current, and 2W power dissipation in a surface mount TO-243AA package.
Mfr Part #:

BCX52E6327

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
Small signal bipolar transistor from Infineon Technologies. Features 60V collector-emitter breakdown voltage, 1A collector current, and 2W power dissipation in a surface mount TO-243AA package.
Total Stock: 780 pcs
$ Price Range: $0.91 - $2.48

BCX52E6327 Available from 1 distributor

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Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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780 pcs
780 pcs On Request 1 On Request On Request 1119+ On Request On Request

BCX52E6327 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Mounting Type
Operating Temperature
Power
Supplier Device Package
Tape & Reel
Vce Saturation (Max) @ Ib, Ic
Voltage

BCX52E6327 Description

Short technical summary and product information.

The BCX52E6327 is a small signal NPN bipolar junction transistor manufactured by Infineon Technologies. It is designed for general purpose switching and amplification applications in surface mount designs.

 

Key electrical specifications include a maximum collector-emitter breakdown voltage (Vceo) of 60V, a maximum collector current (Ic) of 1A, and a maximum power dissipation of 2W. The transistor offers a DC current gain (hFE) of at least 100 at 150mA collector current and 2V Vce, and a typical transition frequency (ft) of 125MHz. The maximum Vce saturation voltage is 500mV at 50mA base current and 500mA collector current.

 

The device is housed in a TO-243AA package, also known as PG-SOT89-4-2, which is a surface mount package suitable for automated assembly. The operating junction temperature range extends up to 150°C.

BCX52E6327 Quick Information

Product Type: Single Bipolar Junction Transistor (BJT)
Canonical Name: BCX52E6327 Small Signal Bipolar Transistor
Subcategory: Single BJT

BCX52E6327 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

BCX52E6327 Estimated Pricing

Qty Low High
1+ $2.48 $2.48
200+ $0.96 $0.96
500+ $0.93 $0.93
1,000+ $0.91 $0.91

Estimated market price range - modelled values for guidance only, not live distributor offers.

BCX52E6327 Features

  • 60V collector-emitter breakdown voltage.
  • 1A maximum collector current rating.
  • 2W power dissipation capability.
  • 125MHz typical transition frequency.
  • Surface mount TO-243AA package.

BCX52E6327 Applications

  • General purpose switching circuits.
  • Signal amplification in audio stages.
  • Low-side driver for small loads.
  • Used in consumer and industrial electronics.

BCX52E6327 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage (Vceo) of the BCX52E6327?

The maximum collector-emitter breakdown voltage (Vceo) is 60V.

What package is the BCX52E6327 available in?

The transistor is available in a TO-243AA surface mount package, also designated as PG-SOT89-4-2.

What is the operating temperature range of the BCX52E6327?

The maximum junction operating temperature is 150°C.

Is the BCX52E6327 RoHS compliant?

The part is listed as RoHS3 compliant, but this data is unverified.

What is the DC current gain (hFE) of the BCX52E6327?

The minimum DC current gain is 100 at Ic=150mA and Vce=2V.

What is the transition frequency of the BCX52E6327?

The typical transition frequency (ft) is 125MHz.

What is the maximum collector current of the BCX52E6327?

The maximum collector current (Ic) is 1A.

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