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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
780 pcs
|
780 pcs | On Request | 1 | On Request | On Request | 1119+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Tape & Reel | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The BCX52E6327 is a small signal NPN bipolar junction transistor manufactured by Infineon Technologies. It is designed for general purpose switching and amplification applications in surface mount designs.
Key electrical specifications include a maximum collector-emitter breakdown voltage (Vceo) of 60V, a maximum collector current (Ic) of 1A, and a maximum power dissipation of 2W. The transistor offers a DC current gain (hFE) of at least 100 at 150mA collector current and 2V Vce, and a typical transition frequency (ft) of 125MHz. The maximum Vce saturation voltage is 500mV at 50mA base current and 500mA collector current.
The device is housed in a TO-243AA package, also known as PG-SOT89-4-2, which is a surface mount package suitable for automated assembly. The operating junction temperature range extends up to 150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.48 | $2.48 |
| 200+ | $0.96 | $0.96 |
| 500+ | $0.93 | $0.93 |
| 1,000+ | $0.91 | $0.91 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter breakdown voltage (Vceo) is 60V.
The transistor is available in a TO-243AA surface mount package, also designated as PG-SOT89-4-2.
The maximum junction operating temperature is 150°C.
The part is listed as RoHS3 compliant, but this data is unverified.
The minimum DC current gain is 100 at Ic=150mA and Vce=2V.
The typical transition frequency (ft) is 125MHz.
The maximum collector current (Ic) is 1A.