| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,840 pcs
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2840 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BCX19LT1G is a general-purpose NPN bipolar junction transistor (BJT) manufactured by ON Semiconductor. It is designed for various switching and amplification applications.
Key electrical characteristics include a maximum collector-emitter breakdown voltage of 45V and a continuous collector current rating of up to 500mA. The transistor exhibits a Vce saturation voltage of 620mV at 50mA collector current and 500mA base current, ensuring efficient switching.
This component is housed in a compact SOT-23-3 surface-mount package, making it suitable for space-constrained designs. The surface-mount capability simplifies integration into printed circuit boards.
With a power dissipation rating of 300mW, the BCX19LT1G is a reliable choice for many electronic circuits requiring a small-signal NPN transistor.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector current (Ic) for the BCX19LT1G is 500 mA.
The collector-emitter breakdown voltage (Vceo) for the BCX19LT1G is 45 V.
The Vce saturation voltage for the BCX19LT1G at 50mA collector current and 500mA base current is 620mV.
The BCX19LT1G transistor is supplied in a SOT-23-3 package.
The maximum power dissipation for the BCX19LT1G is 300 mW.