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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,960 pcs
|
1960 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,878 pcs
|
1878 pcs | On Request | 1 | On Request | On Request | 445 | On Request | On Request |
| Category | |
| Manufacturer Name | |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | |
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| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The BCX19 is an NPN bipolar junction transistor manufactured by On Semiconductor. It is designed for general-purpose switching and amplification applications in low-power circuits.
Key electrical specifications include a collector-emitter breakdown voltage (VCEO) of 45V, a collector current (IC) of 500mA, and a power dissipation of 300mW. The DC current gain (hFE) is a minimum of 100 at 100mA collector current and 1V collector-emitter voltage. The collector-emitter saturation voltage (VCE(sat)) is a maximum of 620mV at 50mA base current and 500mA collector current.
The device operates over a junction temperature range of -55°C to 150°C. It is housed in a compact SOT-23-3 surface-mount package, suitable for space-constrained PCB designs.
This transistor is suitable for low-power switching and signal amplification in consumer electronics, industrial control, and other general-purpose applications.
| Qty | Low | High |
|---|---|---|
| 4,537+ | $0.07 | $0.07 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter breakdown voltage (VCEO) is 45V.
The maximum collector current (IC) is 500mA.
The power dissipation (Pd) is 300mW.
The operating junction temperature range is -55°C to 150°C.
The BCX19 is available in a SOT-23-3 surface-mount package.
The BCX19 is marked as RoHS3 compliant, but this is unverified.