BCW89 The BCW89 is a PNP bipolar transistor in a SOT-23-3 package, rated for 60V collector-emitter voltage and 500mA collector current. Maximum power dissipation is 350mW.
Mfr Part #:

BCW89

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
The BCW89 is a PNP bipolar transistor in a SOT-23-3 package, rated for 60V collector-emitter voltage and 500mA collector current. Maximum power dissipation is 350mW.
Total Stock: 161,972 pcs
$ Price Range: $0.03

BCW89 Available from 2 distributors

Authorised
Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
153,000 pcs
153000 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
8,972 pcs
8972 pcs On Request 1 On Request On Request 1331+ On Request On Request

BCW89 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Medical Grade
Mounting Type
Operating Temperature
Power
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

BCW89 Description

Short technical summary and product information.

The BCW89 is a PNP bipolar junction transistor manufactured by ON Semiconductor. It is designed for general-purpose switching and amplification in low-power circuits. The device features a collector-emitter breakdown voltage of 60V, a maximum collector current of 500mA, and a power dissipation of 350mW, making it suitable for a wide range of applications.

 

The transistor offers a minimum DC current gain (hFE) of 120 at a collector current of 2mA and collector-emitter voltage of 5V, along with a maximum saturation voltage of 300mV at 500µA base current and 10mA collector current. It is housed in a TO-236-3 / SC-59 / SOT-23-3 surface-mount package, with the supplier device package marked as SOT-23-3.

 

For design flexibility, the BCW89 operates over a junction temperature range of -55°C to 150°C. This allows deployment in environments with extended temperature extremes. The surface-mount SOT-23-3 package is suitable for automated assembly and compact PCB layouts.

BCW89 Quick Information

Product Type: PNP Bipolar Junction Transistor
Canonical Name: BCW89 PNP Bipolar Transistor
Subcategory: Single Transistor

BCW89 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

BCW89 Estimated Pricing

Qty Low High
18,000+ $0.03 $0.03

Estimated market price range - modelled values for guidance only, not live distributor offers.

BCW89 Features

  • PNP bipolar transistor in SOT-23-3 package.
  • Rated for 60V collector-emitter breakdown.
  • Handles 500mA maximum collector current.
  • Dissipates up to 350mW maximum power.

BCW89 Applications

  • Ideal for general-purpose switching circuits.
  • Suitable for low-power signal amplification.
  • Common in surface-mount PCB designs.

BCW89 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-emitter breakdown voltage of the BCW89?

60V.

What package is the BCW89 available in?

TO-236-3, SC-59, and SOT-23-3; the supplier device package is SOT-23-3.

What operating temperature range does the BCW89 support?

-55°C to 150°C junction temperature.

Is the BCW89 RoHS compliant?

It is marked as RoHS3 compliant, but the compliance data is unverified and has low confidence.

What is the maximum collector current of the BCW89?

500mA.

What is the maximum power dissipation of the BCW89?

350mW.

What is the minimum DC current gain (hFE) of the BCW89?

120 at Ic = 2mA and Vce = 5V.

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