BCW72LT1G BCW72LT1G is an NPN bipolar junction transistor by On Semiconductor. It features a 45V collector-emitter breakdown voltage, 100mA collector current, and a 300MHz gain bandwidth product in a SOT-23-3 surface mount package.
Mfr Part #:

BCW72LT1G

Available from 4 distributors
Mfr Name: On Semiconductor
On Semiconductor
BCW72LT1G is an NPN bipolar junction transistor by On Semiconductor. It features a 45V collector-emitter breakdown voltage, 100mA collector current, and a 300MHz gain bandwidth product in a SOT-23-3 surface mount package.
Total Stock: 47,024 pcs
$ Price Range: $0.03 - $0.16

BCW72LT1G Available from 4 distributors

Authorised
Non-Authorised

BCW72LT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Base-Emitter On Voltage (VBE(ON))
Base-Emitter Saturation Voltage (Vbe Sat)
Collector Cutoff Current (Maximum @ VCB = 20 V, IE = 0, TA = 25 °C)
Collector Cutoff Current (Maximum @ Vcb=20 V, Ie=0, Ta=100 °C)
Collector Emitter Saturation Voltage (Typical @ IB = 2.5 mA, IC = 50 mA)
Collector Emitter Saturation Voltage (Typical @ Ib = -0.5 mA, Ic = -10 mA)
Collector-Base Voltage (VCBO)
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
DC Current Gain (hFE) (Minimum/Maximum @ Vce=-5 V, Ic=-2 mA)
Emitter-Base Voltage (VEBO)
Frequency
Halogen Free
Mounting Type
Operating Temperature
Packaging Type
Power
Power Dissipation (Maximum @ FR -5 Board)
SVHC Present
Standard Package Quantity
Supplier Device Package
Tape & Reel
Thermal Resistance Junction Ambient (Nominal @ Alumina Substrate)
Thermal Resistance Junction Ambient (Nominal @ FR -5 Board)
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

BCW72LT1G Description

Short technical summary and product information.

The BCW72LT1G is a general-purpose NPN silicon bipolar junction transistor from On Semiconductor, designed for low-power switching and amplification applications. It is housed in a compact SOT-23-3 surface mount package, making it suitable for space-constrained designs.

 

Electrically, the transistor offers a minimum collector-emitter breakdown voltage of 45V, a maximum collector current of 100mA, and a DC current gain (hFE) ranging from 200 to 450 at 2mA collector current and 5V collector-emitter voltage. The typical gain-bandwidth product is 300 MHz, and the low collector-emitter saturation voltage (typical 210mV at 10mA) ensures efficient switching.

 

Thermal characteristics include a maximum power dissipation of 300mW on an alumina substrate and 225mW on an FR-5 board, with a junction-to-ambient thermal resistance of 417°C/W and 556°C/W respectively. The device operates over a junction temperature range of -55°C to +150°C.

 

This component is RoHS3 compliant, Pb-Free, and Halogen Free, meeting current environmental standards. It is supplied in tape and reel packaging with 3000 units per reel. Applications include general purpose switching, signal amplification, and driver circuits in consumer, industrial, and automotive electronics (automotive-qualified S-prefix variant available).

BCW72LT1G Quick Information

Product Type: NPN Bipolar Junction Transistor
Series: BCW72
Canonical Name: BCW72LT1G NPN Bipolar Transistor, 45V VCEO, 100mA, SOT-23-3
Subcategory: Single BJT

BCW72LT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

BCW72LT1G Estimated Pricing

Qty Low High
1+ $0.16 $0.16
10+ $0.10 $0.10
100+ $0.06 $0.06
500+ $0.04 $0.04
1,000+ $0.04 $0.04
3,000+ $0.03 $0.03

Estimated market price range - modelled values for guidance only, not live distributor offers.

BCW72LT1G Features

  • NPN silicon bipolar junction transistor.
  • 45V collector-emitter breakdown voltage.
  • 100mA continuous collector current.
  • 300MHz gain bandwidth product.
  • SOT-23-3 surface mount package.

BCW72LT1G Applications

  • Used in general purpose switching circuits.
  • Ideal for low power amplification.
  • Suitable for signal processing applications.
  • Common in portable electronics due to small package.

BCW72LT1G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-emitter breakdown voltage of the BCW72LT1G?

The minimum collector-emitter breakdown voltage (VCEO) is 45 V.

What is the maximum collector current?

The maximum continuous collector current (IC) is 100 mA.

What package type does the BCW72LT1G use?

It is available in a SOT-23-3 package (also known as TO-236-3 or SC-59).

What is the operating temperature range of the BCW72LT1G?

The junction operating temperature range is -55°C to +150°C.

Is the BCW72LT1G RoHS compliant?

Yes, it is RoHS3 compliant, Pb-Free, and Halogen Free.

What is the DC current gain (hFE) of the BCW72LT1G?

The DC current gain (hFE) ranges from 200 to 450 at VCE = 5 V, IC = 2 mA.

What is the transition frequency (fT) of the BCW72LT1G?

The current-gain bandwidth product (fT) is 300 MHz.

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