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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
43,020 pcs
|
43020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,001 pcs
|
2001 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,001 pcs
|
2001 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2 pcs
|
2 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Base-Emitter On Voltage (VBE(ON)) | |
| Base-Emitter Saturation Voltage (Vbe Sat) | |
| Collector Cutoff Current (Maximum @ VCB = 20 V, IE = 0, TA = 25 °C) | |
| Collector Cutoff Current (Maximum @ Vcb=20 V, Ie=0, Ta=100 °C) | |
| Collector Emitter Saturation Voltage (Typical @ IB = 2.5 mA, IC = 50 mA) | |
| Collector Emitter Saturation Voltage (Typical @ Ib = -0.5 mA, Ic = -10 mA) | |
| Collector-Base Voltage (VCBO) | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| DC Current Gain (hFE) (Minimum/Maximum @ Vce=-5 V, Ic=-2 mA) | |
| Emitter-Base Voltage (VEBO) | |
| Frequency | |
| Halogen Free | |
| Mounting Type | |
| Operating Temperature | |
| Packaging Type | |
| Power | |
| Power Dissipation (Maximum @ FR -5 Board) | |
| SVHC Present | |
| Standard Package Quantity | |
| Supplier Device Package | |
| Tape & Reel | |
| Thermal Resistance Junction Ambient (Nominal @ Alumina Substrate) | |
| Thermal Resistance Junction Ambient (Nominal @ FR -5 Board) | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The BCW72LT1G is a general-purpose NPN silicon bipolar junction transistor from On Semiconductor, designed for low-power switching and amplification applications. It is housed in a compact SOT-23-3 surface mount package, making it suitable for space-constrained designs.
Electrically, the transistor offers a minimum collector-emitter breakdown voltage of 45V, a maximum collector current of 100mA, and a DC current gain (hFE) ranging from 200 to 450 at 2mA collector current and 5V collector-emitter voltage. The typical gain-bandwidth product is 300 MHz, and the low collector-emitter saturation voltage (typical 210mV at 10mA) ensures efficient switching.
Thermal characteristics include a maximum power dissipation of 300mW on an alumina substrate and 225mW on an FR-5 board, with a junction-to-ambient thermal resistance of 417°C/W and 556°C/W respectively. The device operates over a junction temperature range of -55°C to +150°C.
This component is RoHS3 compliant, Pb-Free, and Halogen Free, meeting current environmental standards. It is supplied in tape and reel packaging with 3000 units per reel. Applications include general purpose switching, signal amplification, and driver circuits in consumer, industrial, and automotive electronics (automotive-qualified S-prefix variant available).
| Qty | Low | High |
|---|---|---|
| 1+ | $0.16 | $0.16 |
| 10+ | $0.10 | $0.10 |
| 100+ | $0.06 | $0.06 |
| 500+ | $0.04 | $0.04 |
| 1,000+ | $0.04 | $0.04 |
| 3,000+ | $0.03 | $0.03 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The minimum collector-emitter breakdown voltage (VCEO) is 45 V.
The maximum continuous collector current (IC) is 100 mA.
It is available in a SOT-23-3 package (also known as TO-236-3 or SC-59).
The junction operating temperature range is -55°C to +150°C.
Yes, it is RoHS3 compliant, Pb-Free, and Halogen Free.
The DC current gain (hFE) ranges from 200 to 450 at VCE = 5 V, IC = 2 mA.
The current-gain bandwidth product (fT) is 300 MHz.