| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,000 pcs
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2000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Nexperia BCW70,215 is a PNP bipolar junction transistor (BJT) suitable for various electronic circuits. It offers a maximum collector-emitter voltage (VCEO) of 45V and a maximum continuous collector current (IC) of 100mA.
With a power dissipation rating of 250mW, this transistor is designed for applications requiring moderate power handling. The gain bandwidth product (fT) is 100MHz, indicating its suitability for signal amplification in certain frequency ranges. The DC current gain (hFE) is specified up to 215 at 2mA collector current and 5V.
Packaged in a compact SOT-23 surface-mount case, the BCW70,215 is ideal for space-constrained designs. It operates within a temperature range of -65°C to +150°C. The transistor is supplied on a reel for automated assembly processes.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the BCW70,215 is 45V.
The maximum continuous collector current (IC) for the BCW70,215 is 100mA.
The power dissipation (Pd) for the BCW70,215 is 250mW.
The operating temperature range for the BCW70,215 is -65°C to +150°C.
The BCW70,215 is supplied in a SOT-23 surface-mount package.