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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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6,000 pcs
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6000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BCW69 is a PNP bipolar junction transistor manufactured by ON Semiconductor, designed for general purpose amplification and switching applications. It features a collector-emitter voltage (Vce) of 45V and a collector current (Ic) rating of 100mA, with a power dissipation of 350mW. The device offers a minimum DC current gain (hFE) of 120 at 2mA collector current and 5V Vce, and a low collector-emitter saturation voltage of 300mV maximum at 500µA base current and 10mA collector current.
This transistor is housed in a surface-mount SOT-23-3 package (also available as TO-236-3 or SC-59), making it suitable for compact PCB designs. It operates over a wide junction temperature range of -55°C to 150°C, ensuring reliability in demanding environments. The component is compliant with RoHS3 and REACH regulations, and has a Moisture Sensitivity Level (MSL) of 1, indicating unlimited floor life before soldering.
The BCW69 is commonly used in low-power switching circuits, signal amplification, and driver stages in consumer electronics, automotive systems, and industrial control equipment. Its compact package and robust electrical characteristics make it a versatile choice for designers seeking a reliable PNP transistor.
The BCW69 has a collector-emitter voltage (Vce) rating of 45V.
The BCW69 is available in a surface-mount SOT-23-3 package, also listed as TO-236-3 or SC-59.
The BCW69 operates over a junction temperature range of -55°C to 150°C.
Yes, the BCW69 is listed as RoHS3 compliant (unverified, low confidence).
The minimum DC current gain (hFE) is 120 at a test condition of 2mA collector current and 5V Vce.
The maximum collector-emitter saturation voltage is 300mV at 500µA base current and 10mA collector current.