BCW68HTA

BCW68HTA is a PNP medium power bipolar junction transistor from Diodes Incorporated. It is designed for general-purpose switching and amplification in surface-mount applications. The transistor comes in a SOT23-3 package with matte tin plated leads and a molded plastic, UL 94V-0 rated green compound.

Key electrical ratings include a maximum collector-emitter voltage of -45 V, collector-base voltage of -60 V, emitter-base voltage of -7 V, continuous collector current of -800 mA, peak pulse current of -1000 mA, and base current of -100 mA. DC current gain is minimum 250 at Ic=100 mA and Vce=1 V. Saturation voltage is maximum 300 mV at Ib=10 mA and Ic=100 mA. Transition frequency is typically 100 MHz.

Power dissipation is rated at 310 mW at TA=+25°C with a junction-to-ambient thermal resistance of 403°C/W and junction-to-leads thermal resistance of 350°C/W. The operating junction temperature range is -55°C to 150°C. ESD ratings are 4000 V HBM, 1000 V CDM, and 400 V MM.

The BCW68HTA is supplied in tape and reel packaging with 3000 pieces per 7-inch reel on 8 mm tape. It is RoHS3 compliant, totally lead-free, and halogen and antimony free. The complementary NPN type is BCW66H.