BCW68GLT1G BCW68GLT1G is a PNP general-purpose transistor from ON Semiconductor. It features max VCEO of -45V, continuous collector current of -800mA, and DC current gain (hFE) of 120 minimum at 10mA.
Mfr Part #:

BCW68GLT1G

Available from 3 distributors
Mfr Name: On Semiconductor
On Semiconductor
BCW68GLT1G is a PNP general-purpose transistor from ON Semiconductor. It features max VCEO of -45V, continuous collector current of -800mA, and DC current gain (hFE) of 120 minimum at 10mA.
Total Stock: 47,099 pcs
$ Price Range: $0.03 - $0.16

BCW68GLT1G Available from 3 distributors

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Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
43,020 pcs
43020 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
3,000 pcs
3000 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
1,079 pcs
1079 pcs On Request 1 On Request On Request On Request On Request On Request

BCW68GLT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Collector-Base Voltage (VCBO)
Collector-Emitter Voltage (VCEO)
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
DC Current Gain (hFE) (Minimum @ IC=-300 mA, VCE=-1 V)
DC Current Gain (hFE) (Typical @ IC=-100 mA, VCE=-1 V)
Emitter-Base Voltage (VEBO)
Frequency
Halogen Free
Mounting Type
Operating Temperature
Power
Power Dissipation (Maximum @ Alumina Substrate, TA = 25 °C)
Standard Package Quantity
Storage Temperature
Supplier Device Package
Tape & Reel
Termination Style
Thermal Resistance Junction To Ambient (Maximum @ Alumina Substrate)
Thermal Resistance Junction To Ambient (Maximum @ FR -5 Board)
Transistor Type
Vbe Saturation (Vbe(sat))
Vce Saturation (Max) @ Ib, Ic
Vce Saturation (Maximum @ Ic=500 mA, Ib=50 mA)
Voltage

BCW68GLT1G Description

Short technical summary and product information.

The BCW68GLT1G is a PNP silicon bipolar junction transistor designed for general purpose amplification and switching applications. Manufactured by ON Semiconductor, this transistor offers a maximum collector-emitter voltage (VCEO) of -45 V and a maximum collector current of -800 mA continuous. The DC current gain (hFE) is a minimum of 120 at IC=-10 mA, VCE=-1 V, with typical gain of 160 at IC=-100 mA. The transistor also provides a transition frequency (fT) of 100 MHz minimum at IC=-20 mA, VCE=-10 V.

 

For power management, the device dissipates up to 225 mW on an FR-5 board and 300 mW on an alumina substrate at 25°C ambient. The thermal resistance junction-to-ambient is 556 °C/W on FR-5 and 417 °C/W on alumina. The operating junction temperature range is -55°C to 150°C. The collector-emitter saturation voltage (VCE(sat)) is a maximum of -0.7 V at IC=-500 mA, IB=-50 mA.

 

The BCW68GLT1G is housed in a surface mount SOT-23-3 (TO-236) package with gull wing leads, suitable for automated assembly. It is supplied in tape and reel packaging with 3000 units per reel. The device is Pb-Free, Halogen Free/BFR Free, and RoHS3 compliant, making it suitable for environmentally sensitive applications. An automotive-grade variant (NSVBCW68GLT1G) is also available for applications requiring AEC-Q101 qualification.

BCW68GLT1G Quick Information

Product Type: Bipolar Transistor - Single
Series: BCW68GL
Canonical Name: BCW68GLT1G PNP Bipolar Junction Transistor
Subcategory: PNP Bipolar Transistor

BCW68GLT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected
Lead Free: Yes

BCW68GLT1G Estimated Pricing

Qty Low High
1+ $0.16 $0.16
10+ $0.10 $0.10
100+ $0.06 $0.06
500+ $0.04 $0.04
1,000+ $0.04 $0.04
3,000+ $0.03 $0.03
6,000+ $0.03 $0.03

Estimated market price range - modelled values for guidance only, not live distributor offers.

BCW68GLT1G Features

  • PNP silicon bipolar junction transistor.
  • Maximum VCEO of -45 V.
  • Continuous collector current -800 mA.
  • SOT-23-3 surface mount package.
  • RoHS3 and halogen free compliant.

BCW68GLT1G Applications

  • General purpose switching and amplification.
  • Low power audio amplifier stages.
  • Driver circuits for relays or LEDs.

BCW68GLT1G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage (VCEO) of the BCW68GLT1G?

The maximum collector-emitter voltage (VCEO) is -45 V.

What is the maximum continuous collector current?

The maximum continuous collector current is -800 mA.

What is the DC current gain (hFE) of this transistor?

The minimum hFE is 120 at IC=-10 mA, VCE=-1 V. Typical hFE is 160 at IC=-100 mA, and minimum 60 at IC=-300 mA.

What is the collector-emitter saturation voltage (VCE(sat))?

According to the datasheet, the maximum VCE(sat) is -0.7 V at IC=-500 mA, IB=-50 mA.

What package is the BCW68GLT1G available in?

It is available in an SOT-23-3 (TO-236) surface mount package.

What is the operating temperature range?

The operating junction temperature range is -55°C to 150°C.

Is the BCW68GLT1G RoHS compliant?

Yes, it is RoHS3 compliant, Pb-Free, and Halogen Free/BFR Free as verified by the datasheet.

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