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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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60,000 pcs
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60000 pcs | On Request | 1 | On Request | On Request | 14+15+ | On Request | On Request |
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The BCW67BE6327 is a small signal bipolar transistor from Infineon Technologies, intended for low-power amplification and switching in compact electronic devices.
Key electrical specifications include a collector-emitter voltage rating of 32V, a collector current rating of 800mA, and a minimum DC current gain (hFE) of 160 at 100mA and 1V. The transistor can dissipate up to 330mW and offers a typical transition frequency of 200MHz, making it suitable for low-frequency signal processing.
The device is housed in a SOT-23-3 surface mount package (TO-236-3 / SC-59) and is rated for a maximum junction temperature of 150°C. The surface mount design allows for automated assembly and space-constrained PCB layouts.
The BCW67BE6327 is housed in a SOT-23-3 surface mount package, also known as TO-236-3 or SC-59.
The maximum junction temperature is 150°C.
The BCW67BE6327 is listed as RoHS3 compliant in the product database.
The rated collector current is 800mA.
The collector-emitter voltage rating is 32V.
The minimum hFE is 160 at Ic=100mA and Vce=1V.
The typical transition frequency is 200MHz.