BCW66HTA

The BCW66HTA is a 45V NPN medium power transistor manufactured by Diodes Incorporated in a compact SOT23-3 surface mount package. It is designed for applications requiring up to 800mA of continuous collector current and features a high DC current gain (hFE) of 250 minimum at 100mA, 1V. With a typical low saturation voltage of 300mV at 100mA and a transition frequency of 100MHz, this transistor is well suited for both linear amplification and high-speed switching.

The device can handle peak pulse currents up to 1000mA and offers a maximum power dissipation of 310mW with a minimum pad layout, or 350mW with a 15mm x 15mm 1oz copper pad. The thermal resistance from junction to ambient is 403°C/W (min pad) and 357°C/W with the larger pad, enabling proper heat management in space-constrained designs. The operating junction temperature range spans -55°C to +150°C.

The BCW66HTA is fully RoHS3 compliant, totally lead-free, and halogen- and antimony-free (Green device). It is rated MSL Level 1 (unlimited) per J-STD-020 and the terminals are matte tin plated for excellent solderability. A complementary PNP type (BCW68H) and an automotive-compliant variant (BCW66HQ) are also available.