BCW66GLT1G NPN silicon transistor with 45V collector-emitter voltage and 800mA continuous collector current. Surface mount SOT-23-3 package.
Mfr Part #:

BCW66GLT1G

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
NPN silicon transistor with 45V collector-emitter voltage and 800mA continuous collector current. Surface mount SOT-23-3 package.
✓ Total Stock: 52,022 pcs
$ Price Range: $0.04 - $0.19

BCW66GLT1G Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
52,020 pcs
52020 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
2 pcs
2 pcs On Request 1 On Request On Request On Request On Request On Request

BCW66GLT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Halogen Free
Lead Spacing
Lead Style
Mounting Type
Operating Temperature
Power
SVHC Present
Storage Temperature
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

BCW66GLT1G Description

Short technical summary and product information.

The BCW66GLT1G is a general purpose NPN silicon transistor in a surface mount SOT-23-3 package. It features a maximum collector-emitter voltage of 45V and a continuous collector current rating of 800mA, with a pulsed capability of 1.2A. The device offers a DC current gain (hFE) of at least 160 at 100mA collector current, making it suitable for a wide range of switching and amplification applications.

 

This transistor is designed for low power dissipation, with 225mW on FR-5 board and 300mW on alumina substrate. It operates over a junction temperature range of -55°C to 150°C. The transition frequency is 100MHz, indicating adequate performance for moderate frequency circuits.

 

The BCW66GLT1G is Pb-Free, Halogen Free/BFR Free, and RoHS Compliant. It is supplied in tape and reel packaging with 3000 units per reel. The SOT-23-3 package is compact and suitable for automated assembly.

BCW66GLT1G Quick Information

Product Type: Bipolar Junction Transistor (BJT)
Series: BCW66
Canonical Name: BCW66GLT1G NPN General Purpose Transistor
Subcategory: Single BJT

BCW66GLT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

BCW66GLT1G Estimated Pricing

Qty Low High
1+ $0.19 $0.19
10+ $0.11 $0.11
100+ $0.07 $0.07
500+ $0.05 $0.05
1,000+ $0.04 $0.04
3,000+ $0.04 $0.04

Estimated market price range - modelled values for guidance only, not live distributor offers.

BCW66GLT1G Features

  • NPN silicon transistor for general purpose use.
  • Maximum collector-emitter voltage 45V rating.
  • Continuous collector current up to 800mA.
  • Surface mount SOT-23-3 compact package.
  • RoHS compliant, Pb-free and halogen free.

BCW66GLT1G Applications

  • Ideal for general purpose switching circuits.
  • Used in signal amplification stages.
  • Suitable for low power driver applications.
  • Works in automotive modules (AEC-Q101 variant).

BCW66GLT1G FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage of the BCW66GLT1G?

The maximum collector-emitter voltage (VCEO) is 45V.

What package is the BCW66GLT1G available in?

The BCW66GLT1G is available in a SOT-23-3 (TO-236) surface mount package.

What is the operating temperature range of the BCW66GLT1G?

The operating junction temperature range is -55°C to 150°C.

Is the BCW66GLT1G RoHS compliant?

Yes, the BCW66GLT1G is RoHS3 compliant, Pb-Free, and Halogen Free/BFR Free as stated in the datasheet.

What is the DC current gain (hFE) of the BCW66GLT1G?

The DC current gain (hFE) is at least 160 at IC=100mA, VCE=1V, and at least 60 at IC=500mA, VCE=2V.

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