BCW66G BCW66G is an NPN bipolar junction transistor from ON Semiconductor. It features 45V collector-emitter voltage, 1A collector current, and 350mW power dissipation in a SOT-23-3 surface mount package.
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BCW66G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
BCW66G is an NPN bipolar junction transistor from ON Semiconductor. It features 45V collector-emitter voltage, 1A collector current, and 350mW power dissipation in a SOT-23-3 surface mount package.
Total Stock: 4,700 pcs

BCW66G Available from 1 distributor

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BCW66G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Medical Grade
Mounting Type
Operating Temperature
Power
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

BCW66G Description

Short technical summary and product information.

The BCW66G is a general-purpose NPN bipolar junction transistor manufactured by ON Semiconductor. It is designed for low to medium power switching and amplification applications.

 

Key electrical specifications include a collector-emitter voltage (Vceo) of 45V, a collector current (Ic) of 1A, and a power dissipation (Pd) of 350mW. The transistor offers a DC current gain (hFE) of 160 minimum at Ic=100mA and Vce=1V, and a transition frequency (ft) of 100MHz. The collector-emitter saturation voltage (Vce(sat)) is 700mV maximum at Ib=50mA and Ic=500mA.

 

The device is housed in a SOT-23-3 surface mount package (also known as TO-236-3 or SC-59), suitable for automated assembly. The operating temperature range is -55°C to 150°C junction temperature.

 

This transistor is suitable for a variety of general purpose switching and amplifier circuits where moderate voltage and current ratings are required. Its surface mount package makes it ideal for compact PCB designs.

BCW66G Quick Information

Product Type: Bipolar Junction Transistor (BJT)
Canonical Name: BCW66G - NPN Bipolar Transistor, 45V Vceo, 1A Ic, SOT-23-3
Subcategory: Single BJT

BCW66G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

BCW66G Features

  • NPN bipolar junction transistor design.
  • 45V collector-emitter voltage rating.
  • 1A continuous collector current capability.
  • Surface mount SOT-23-3 package.

BCW66G Applications

  • General purpose switching and amplification circuits.
  • Driver stages for medium power loads.
  • Signal amplification in consumer electronics.
  • Low power motor and relay control.

BCW66G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-emitter voltage (Vceo) of the BCW66G?

45 V.

What package type is the BCW66G available in?

SOT-23-3 (also TO-236-3, SC-59).

What is the operating temperature range of the BCW66G?

-55°C to 150°C junction temperature.

Is the BCW66G RoHS compliant?

Yes, it is RoHS3 compliant per existing database information.

What is the maximum collector current of the BCW66G?

1 A.

What is the DC current gain (hFE) of the BCW66G?

Minimum 160 at Ic=100mA, Vce=1V.

What is the power dissipation of the BCW66G?

350 mW.

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