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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,950 pcs
|
2950 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,940 pcs
|
2940 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
600 pcs
|
600 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request | |
|
185 pcs
|
185 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Collector-Base Breakdown Voltage (VCBO) | |
| Collector-Emitter Breakdown Voltage (VCEO) | |
| Collector-Emitter Saturation Voltage (Maximum @ Ib=10 mA, Ic=100 mA) | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| DC Current Gain (hFE) (Minimum @ Ic=10 mA, Vce=1.0 V) | |
| DC Current Gain (hFE) (Minimum @ Ic=100 nA, Vce=10 V) | |
| DC Current Gain (hFE) (Minimum @ Ic=500 mA, Vce=2.0 V) | |
| DC Current Gain (hFE) (Minimum/Maximum @ Ic=100 mA, Vce=1.0 V) | |
| Emitter-Base Breakdown Voltage (VEBO) | |
| Frequency | |
| Halogen Free | |
| Junction and Storage Temperature Range | |
| Medical Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Power Dissipation (Nominal @ Alumina substrate, TA=25 °C) | |
| SVHC Present | |
| Standard Package Quantity | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Thermal Resistance (Junction to Ambient) (Nominal @ Alumina substrate) | |
| Thermal Resistance (Junction to Ambient) (Nominal @ FR -5 board) | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The BCW65ALT1G is a general purpose NPN silicon transistor designed for a wide range of low-power amplification and switching applications. Manufactured by On Semiconductor, this device offers a collector-emitter breakdown voltage (VCEO) of 32 V minimum, a collector-base breakdown voltage of 60 V minimum, and a continuous collector current rating of 800 mA. The transistor exhibits a DC current gain (hFE) ranging from 100 to 250 at Ic=100 mA, Vce=1.0 V, with a maximum collector-emitter saturation voltage of 700 mV at Ib=50 mA, Ic=500 mA.
The device is available in a surface-mount SOT-23 (TO-236) package, making it suitable for compact PCB designs. It supports an operating and storage junction temperature range of -55°C to +150°C. Power dissipation is rated at 225 mW on an FR-5 board and 300 mW on an alumina substrate, with corresponding thermal resistances of 556°C/W and 417°C/W respectively.
The BCW65ALT1G is part of On Semiconductor's Pb-Free, Halogen Free/BFR Free product line and is RoHS compliant. The suffix 'G' in the part number indicates Pb-Free construction. It is supplied in tape and reel packaging with 3000 units per reel, suitable for automated assembly processes.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.21 | $0.21 |
| 10+ | $0.13 | $0.13 |
| 100+ | $0.08 | $0.08 |
| 500+ | $0.06 | $0.06 |
| 1,000+ | $0.05 | $0.05 |
| 3,000+ | $0.04 | $0.04 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The minimum collector-emitter breakdown voltage (VCEO) is 32 V.
It is available in a surface-mount SOT-23 (TO-236) package.
The operating junction temperature range is -55°C to +150°C.
Yes, it is RoHS3 compliant, Pb-Free, and Halogen Free/BFR Free.
At Ic=100 mA, Vce=1.0 V, hFE ranges from 100 to 250. Minimum values are 35 at Ic=100 nA, Vce=10 V and 35 at Ic=500 mA, Vce=2.0 V.
The maximum VCE(sat) is 700 mV at Ib=50 mA, Ic=500 mA, and 300 mV at Ib=10 mA, Ic=100 mA.
It is supplied in tape and reel with 3000 pieces per reel.