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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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1,957 pcs
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1957 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | |
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| Tape & Reel | |
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The BCW60C is an NPN bipolar junction transistor from Infineon Technologies. It features a maximum collector-emitter voltage of 32V, a maximum collector current of 100mA, and a power dissipation of 350mW. The transistor offers a minimum DC current gain of 250 at 2mA and 5V, and a typical transition frequency of 125MHz.
This transistor is designed for surface mount technology, packaged in a SOT-23-3 (TO-236-3) case. It is suitable for low-power amplification and switching applications where high current gain and moderate frequency performance are required. The 125MHz transition frequency enables use in high-frequency signal processing circuits. The low power dissipation and small footprint make it ideal for compact electronic designs.
With a maximum Vce saturation of 550mV at 50mA, the transistor ensures efficient switching in low-voltage circuits. The package is RoHS3 compliant and has a moisture sensitivity level of 1 (unlimited).
The maximum collector-emitter voltage is 32V.
The maximum collector current is 100mA.
The maximum power dissipation is 350mW.
The minimum DC current gain is 250 at 2mA and 5V.
The typical transition frequency is 125MHz.
The transistor is available in a SOT-23-3 (TO-236-3) surface mount package.
Yes, the BCW60C is marked as RoHS3 compliant, though this status is unverified.