BCW60C NPN bipolar transistor with 32V maximum collector-emitter voltage, 100mA collector current, 350mW power dissipation, in SOT-23-3 surface mount package.
Mfr Part #:

BCW60C

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
NPN bipolar transistor with 32V maximum collector-emitter voltage, 100mA collector current, 350mW power dissipation, in SOT-23-3 surface mount package.
Total Stock: 1,957 pcs

BCW60C Available from 1 distributor

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BCW60C Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Mounting Type
Power
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

BCW60C Description

Short technical summary and product information.

The BCW60C is an NPN bipolar junction transistor from Infineon Technologies. It features a maximum collector-emitter voltage of 32V, a maximum collector current of 100mA, and a power dissipation of 350mW. The transistor offers a minimum DC current gain of 250 at 2mA and 5V, and a typical transition frequency of 125MHz.

 

This transistor is designed for surface mount technology, packaged in a SOT-23-3 (TO-236-3) case. It is suitable for low-power amplification and switching applications where high current gain and moderate frequency performance are required. The 125MHz transition frequency enables use in high-frequency signal processing circuits. The low power dissipation and small footprint make it ideal for compact electronic designs.

 

With a maximum Vce saturation of 550mV at 50mA, the transistor ensures efficient switching in low-voltage circuits. The package is RoHS3 compliant and has a moisture sensitivity level of 1 (unlimited).

BCW60C Quick Information

Product Type: Bipolar Junction Transistor (BJT)
Canonical Name: NPN Bipolar Junction Transistor, 32V, 100mA, SOT-23-3
Subcategory: Single BJT

BCW60C Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

BCW60C Features

  • NPN bipolar junction transistor.
  • 32V maximum collector-emitter voltage.
  • 100mA maximum collector current.
  • 125MHz typical transition frequency.
  • Surface mount SOT-23-3 package.

BCW60C Applications

  • Suited for low-power signal amplification.
  • Used in high-frequency switching circuits.
  • Ideal for compact surface mount designs.

BCW60C FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage of the BCW60C?

The maximum collector-emitter voltage is 32V.

What is the maximum collector current of the BCW60C?

The maximum collector current is 100mA.

What is the power dissipation rating of the BCW60C?

The maximum power dissipation is 350mW.

What is the minimum DC current gain of the BCW60C?

The minimum DC current gain is 250 at 2mA and 5V.

What is the transition frequency of the BCW60C?

The typical transition frequency is 125MHz.

What is the package type of the BCW60C?

The transistor is available in a SOT-23-3 (TO-236-3) surface mount package.

Is the BCW60C RoHS compliant?

Yes, the BCW60C is marked as RoHS3 compliant, though this status is unverified.

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