| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Frequency | |
| Lead Spacing | |
| Lead Style | |
| Mounting Style | |
| Operating Temperature | |
| Power Dissipation | |
| SVHC Present | |
| Storage Temperature |
The BCW60B,215 is a general-purpose NPN bipolar junction transistor (BJT) manufactured by Philips. It is designed for low current and low voltage applications, suitable for general-purpose switching and amplification circuits.
Key electrical characteristics include a collector-emitter breakdown voltage of 32V and a continuous collector current rating of 0.1A. The transistor operates at frequencies up to 250MHz and has a maximum power dissipation of 250mW. The DC current gain (hFE) is a minimum of 180 at 2mA and 5V.
This component is housed in a compact SOT-23-3 surface-mount package, measuring 3mm in length, 1.4mm in width, and 1mm in height. It is designed for surface mounting and is supplied on tape and reel.
The operating temperature range for the BCW60B,215 is from -65°C to 150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.09 | $0.09 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The breakdown voltage (Collector to Emitter) of the BCW60B,215 is 32V.
The continuous collector current for the BCW60B,215 is 0.1A.
The minimum DC current gain (hFE) is 180 at 2mA and 5V.
The operating frequency of the BCW60B,215 is 250MHz.
The power dissipation rating for the BCW60B,215 is 250mW.
The operating temperature range for the BCW60B,215 is -65°C to 150°C.
The BCW60B,215 is supplied in a SOT-23-3 surface mount package.