BCW60B NPN epitaxial silicon transistor rated for 32V collector-base voltage, 100mA collector current, and 350mW power dissipation in a SOT-23-3 surface mount package.
Mfr Part #:

BCW60B

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
NPN epitaxial silicon transistor rated for 32V collector-base voltage, 100mA collector current, and 350mW power dissipation in a SOT-23-3 surface mount package.
Total Stock: 1,205,000 pcs
$ Price Range: $0.01 - $0.03

BCW60B Available from 1 distributor

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BCW60B Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Base Emitter On Voltage Vbe On (Typical/Maximum @ Ic=2 mA, Vce=5 V)
Base Emitter Saturation Voltage Vbe Sat (Maximum @ Ib=0.25 mA, Ic=10 mA)
Base Emitter Saturation Voltage Vbe Sat (Maximum @ Ib=1.25 mA, Ic=50 mA)
Collector Emitter Saturation Voltage Vce Sat (Maximum @ Ib=0.25 mA, Ic=10 mA)
Collector-Base Voltage (VCBO)
Collector-Emitter Breakdown Voltage (BVCEO) (Min) @ Ic=2mA, Ib=0
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Emitter-Base Breakdown Voltage (BVEBO) (Min) @ Ie=1µA
Emitter-Base Voltage (VEBO)
Frequency
Mounting Type
Output Capacitance (Cob) (Typ @ VCB=10V, f=1MHz)
Power
Storage Temperature
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

BCW60B Description

Short technical summary and product information.

The BCW60B is an NPN epitaxial silicon transistor designed for general purpose switching and amplification applications. It offers a maximum collector-base voltage of 32 V, a maximum collector current of 100 mA, and a maximum power dissipation of 350 mW. The device features a minimum DC current gain (hFE) of 180 at Ic=2mA and Vce=5V, making it suitable for low-power signal processing.

 

Key electrical characteristics include a typical current gain bandwidth product (fT) of 125 MHz, a typical output capacitance of 4.5 pF at Vcb=10V, and a collector-emitter saturation voltage of 550 mV max at Ib=1.25mA and Ic=50mA. The device is housed in a standard SOT-23-3 surface mount package (also available as TO-236-3 or SC-59) and is suitable for automated assembly.

 

This transistor is commonly used in general purpose switching circuits, amplifier stages, and interface applications where moderate voltage and current handling is required. The marking code for the BCW60B variant is AB as specified in the datasheet.

BCW60B Quick Information

Product Type: Bipolar Junction Transistor (BJT)
Series: BCW60
Canonical Name: BCW60B NPN Epitaxial Silicon Transistor
Subcategory: Single BJT

BCW60B Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

BCW60B Estimated Pricing

Qty Low High
1+ $0.02 $0.02
10+ $0.01 $0.01
100+ $0.01 $0.01
500+ $0.01 $0.01
1,000+ $0.01 $0.01
30,000+ $0.03 $0.03
72,000+ $0.03 $0.03

Estimated market price range - modelled values for guidance only, not live distributor offers.

BCW60B Features

  • NPN epitaxial silicon transistor design.
  • Maximum VCEO of 32 volts.
  • Collector current rating of 100 mA.
  • Minimum hFE of 180 at 2mA/5V.
  • SOT-23-3 surface mount package.

BCW60B Applications

  • General purpose switching circuits.
  • Low power amplification stages.
  • Signal processing applications.
  • Interface and driver circuits.

BCW60B FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage of the BCW60B?

32 volts maximum.

What is the maximum collector current rating?

100 mA maximum.

What is the power dissipation of this transistor?

350 mW maximum.

What is the minimum DC current gain (hFE) of BCW60B?

Minimum hFE is 180 at Ic=2mA and Vce=5V.

What package types are available for BCW60B?

TO-236-3, SC-59, and SOT-23-3. The supplier device package is SOT-23-3.

Is the BCW60B RoHS compliant?

Yes, it is marked as RoHS3 compliant.

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