| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
60,000 pcs
|
60000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| SVHC Present | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Termination Style | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The BCW33LT3G is an NPN silicon general purpose transistor manufactured by onsemi. Designed for low-power amplification and switching applications, it offers a collector-emitter breakdown voltage of 32V and a continuous collector current of 100mA.
With a DC current gain (hFE) ranging from 420 to 800 at 2mA and 5V, and a low collector-emitter saturation voltage of 250mV at 10mA, this transistor provides efficient switching performance. The maximum noise figure is 10dB, making it suitable for low-noise amplifier stages.
Housed in a surface-mount SOT-23-3 package, the BCW33LT3G is designed for compact PCB layouts. It has a maximum power dissipation of 300mW on an alumina substrate and operates over a junction temperature range of -55°C to 150°C. The device is Pb-Free and RoHS compliant (unverified), and is supplied in tape and reel packaging with 10,000 units per reel.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.18 | $0.18 |
| 10+ | $0.11 | $0.11 |
| 100+ | $0.07 | $0.07 |
| 500+ | $0.05 | $0.05 |
| 1,000+ | $0.04 | $0.04 |
| 2,500+ | $0.04 | $0.04 |
| 5,000+ | $0.03 | $0.03 |
| 10,000+ | $0.02 | $0.02 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) is 32V.
Surface-mount SOT-23-3 (TO-236-3, SC-59).
-55°C to 150°C junction temperature.
The datasheet indicates Pb-Free packages are available, but RoHS status is not explicitly confirmed. It is marked as RoHS3 Compliant in some sources with low confidence.
The hFE ranges from 420 to 800 at IC=2mA, VCE=5V.
The maximum continuous collector current is 100mA.
The maximum collector-emitter saturation voltage is 250mV at IC=10mA, IB=0.5mA.