BCW33LT1G On Semiconductor BCW33LT1G is a NPN silicon general purpose transistor. It features a 32V collector-emitter voltage, 100mA collector current, and a DC current gain range of 420 to 800.
Mfr Part #:

BCW33LT1G

Available from 3 distributors
Mfr Name: On Semiconductor
On Semiconductor
On Semiconductor BCW33LT1G is a NPN silicon general purpose transistor. It features a 32V collector-emitter voltage, 100mA collector current, and a DC current gain range of 420 to 800.
✓ Total Stock: 1,291 pcs
$ Price Range: $0.03 - $0.18

BCW33LT1G Available from 3 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
563 pcs
563 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
563 pcs
563 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
165 pcs
165 pcs On Request 1 On Request On Request On Request On Request On Request

BCW33LT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Halogen Free
Mounting Type
Operating Temperature
Power
SVHC Present
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

BCW33LT1G Description

Short technical summary and product information.

The BCW33LT1G is an NPN silicon general purpose transistor from On Semiconductor. It offers a maximum collector-emitter voltage of 32 V and a continuous collector current of 100 mA. The DC current gain (hFE) is specified between 420 and 800 at a test condition of IC=2 mA, VCE=5 V. The collector-emitter saturation voltage is a maximum of 250 mV at IC=10 mA, IB=0.5 mA.

 

Designed for general purpose amplification and switching applications, this transistor features low output capacitance of 4.0 pF and a noise figure of 10 dB under typical conditions. Power dissipation is rated at 300 mW on alumina substrate and 225 mW on FR-5 board, with corresponding thermal resistances of 417 °C/W and 556 °C/W. The operating junction temperature range is -55°C to 150°C.

 

The device is housed in a surface-mount SOT-23-3 (TO-236) package. It is supplied in tape and reel packaging with 3000 units per reel. The BCW33LT1G is RoHS3 compliant, Pb-Free, and Halogen Free/BFR Free.

BCW33LT1G Quick Information

Product Type: NPN Bipolar Transistor
Series: BCW33
Canonical Name: On Semiconductor BCW33LT1G NPN Silicon General Purpose Transistor
Subcategory: Single Bipolar Transistor

BCW33LT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

BCW33LT1G Estimated Pricing

Qty Low High
1+ $0.18 $0.18
10+ $0.11 $0.11
100+ $0.07 $0.07
500+ $0.05 $0.05
1,000+ $0.05 $0.05
3,000+ $0.03 $0.03

Estimated market price range - modelled values for guidance only, not live distributor offers.

BCW33LT1G Features

  • NPN silicon general purpose transistor.
  • 32V collector-emitter voltage rating.
  • 100mA continuous collector current capability.
  • DC current gain from 420 to 800.
  • RoHS, Pb-Free, and Halogen Free compliant.

BCW33LT1G Applications

  • General purpose switching and amplification.
  • Suitable for low-power signal processing.
  • Ideal for portable electronic devices.
  • Used in general purpose signal amplification circuits.

BCW33LT1G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the operating voltage of BCW33LT1G?

The maximum collector-emitter voltage (VCEO) is 32 V.

What package is BCW33LT1G available in?

It comes in an SOT-23-3 (TO-236) surface mount package.

What is the operating temperature range?

The junction temperature range is -55°C to 150°C.

Is BCW33LT1G RoHS compliant?

Yes, it is RoHS3 compliant, Pb-Free, and Halogen Free/BFR Free.

What is the DC current gain (hFE) range?

The hFE ranges from 420 to 800 at IC=2mA, VCE=5V.

What is the collector-emitter saturation voltage?

The maximum VCE(sat) is 250 mV at IC=10mA, IB=0.5mA.

What is the power dissipation?

300 mW on alumina substrate and 225 mW on FR-5 board at 25°C.

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