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BCW33LT1 NPN silicon general purpose transistor. Features 32V collector-emitter breakdown voltage, 100mA collector current, and hFE of 420-800.
Mfr Part #:

BCW33LT1

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
NPN silicon general purpose transistor. Features 32V collector-emitter breakdown voltage, 100mA collector current, and hFE of 420-800.
✓ Total Stock: 100 pcs
$ Price Range: $0.02 - $0.04

BCW33LT1 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
OTL Components ✓
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100 pcs
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100 pcs On Request 1 On Request On Request On Request On Request On Request
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BCW33LT1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Mounting Type
Operating Temperature
Power
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
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BCW33LT1 Description

Short technical summary and product information.

This is an NPN silicon general purpose transistor from On Semiconductor, designed for low-power amplification and switching applications. It features a collector-emitter breakdown voltage of 32V and continuous collector current of 100mA.

 

Electrical characteristics include a DC current gain range of 420 to 800 at 2mA and 5V, a collector-emitter saturation voltage of 250mV at 10mA, and a base-emitter on voltage of 0.55 to 0.70V. The device offers low output capacitance of 4.0pF and a noise figure of 10dB, making it suitable for low-noise amplifier stages.

 

The transistor can dissipate up to 300mW on an alumina substrate (225mW on FR-5) and operates over a junction temperature range of -55°C to 150°C. It is available in a surface-mount SOT-23-3 (TO-236) package.

 

The part is available in tape and reel packaging with 3000 units per reel, and lead-free variants (BCW33LT1G) are also offered. Typical applications include general-purpose switching, signal amplification, and driver stages.

BCW33LT1 Quick Information

Product Type: NPN Bipolar Transistor
Canonical Name: BCW33LT1 NPN Silicon General Purpose Transistor
Subcategory: Single NPN Transistor

BCW33LT1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected

BCW33LT1 Estimated Pricing

Qty Low High
7,869+ $0.04 $0.04
24,000+ $0.02 $0.02

Estimated market price range - modelled values for guidance only, not live distributor offers.

BCW33LT1 Features

  • NPN silicon general purpose transistor.
  • 32V collector-emitter breakdown voltage.
  • 100mA continuous collector current.
  • High DC current gain of 420-800.
  • Surface mount SOT-23-3 package.

BCW33LT1 Applications

  • General purpose low-power switching.
  • Signal amplification and driver stages.
  • Low-noise amplifier designs.
  • Bias circuits and logic level shifting.

BCW33LT1 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-emitter voltage rating of the BCW33LT1?

The minimum collector-emitter breakdown voltage (VCEO) is 32 V.

What package does the BCW33LT1 come in?

The BCW33LT1 is available in a surface-mount SOT-23-3 (TO-236) package.

What is the operating temperature range of the BCW33LT1?

The junction operating temperature range is -55°C to 150°C.

Is the BCW33LT1 RoHS compliant?

The part is listed as RoHS3 Compliant, but this is unverified and should be confirmed with the manufacturer.

What is the DC current gain (hFE) of the BCW33LT1?

The DC current gain ranges from 420 to 800 at Ic=2mA, Vce=5V.

What is the maximum collector current of the BCW33LT1?

The maximum continuous collector current is 100 mA.

What is the power dissipation of the BCW33LT1?

The maximum power dissipation is 300 mW on an alumina substrate and 225 mW on FR-5 board.

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