BCW32LT1G BCW32LT1G is an NPN silicon general purpose transistor from On Semiconductor. It features 32V collector-emitter voltage, 100mA collector current, and comes in a SOT-23 surface mount package.
Mfr Part #:

BCW32LT1G

Available from 3 distributors
Mfr Name: On Semiconductor
On Semiconductor
BCW32LT1G is an NPN silicon general purpose transistor from On Semiconductor. It features 32V collector-emitter voltage, 100mA collector current, and comes in a SOT-23 surface mount package.
Total Stock: 57,901 pcs
$ Price Range: $0.04 - $0.24

BCW32LT1G Available from 3 distributors

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Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
52,020 pcs
52020 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
3,000 pcs
3000 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
2,881 pcs
2881 pcs On Request 1 On Request On Request 20+ On Request On Request

BCW32LT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Base-Emitter On Voltage (VBE(ON))
Collector Current - Continuous
Collector Cutoff Current (ICBO)
Collector-Base Voltage (VCBO)
Collector-Emitter Voltage (VCEO)
Current
DC Current Gain (Minimum/Maximum @ Ic=2 mA, Vce=5 V)
DC Current Gain (hFE) (Min) @ Ic, Vce
Emitter-Base Voltage (VEBO)
Halogen Free
Lead Style
Mounting Type
Noise Figure (NF)
Operating Temperature
Output Capacitance (Cobo)
Power
Power Dissipation (Maximum @ Alumina Substrate, TA = 25 °C)
Power Dissipation (Maximum @ FR -5 Board, TA = 25 °C)
SVHC Present
Storage Temperature
Supplier Device Package
Tape & Reel
Termination Style
Thermal Resistance Junction To Ambient (Maximum @ Alumina Substrate)
Thermal Resistance Junction To Ambient (Maximum @ FR -5 Board)
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

BCW32LT1G Description

Short technical summary and product information.

The BCW32LT1G is an NPN silicon general purpose transistor manufactured by On Semiconductor. It is designed for low-power switching and amplification applications in surface mount circuits. The device is rated for a maximum collector-emitter voltage of 32V and a continuous collector current of 100mA, making it suitable for a wide range of general purpose signal processing tasks.

 

Key electrical characteristics include a DC current gain (hFE) ranging from 200 to 450 at IC=2mA and VCE=5V, and a low collector-emitter saturation voltage of 250mV at IB=500µA and IC=10mA. The transistor also features a maximum noise figure of 10dB at IC=0.2mA, VCE=5V, and 1kHz, which supports use in low-noise amplifier stages.

 

The device is offered in the compact SOT-23 (TO-236) surface mount package, which is ideal for space-constrained PCB designs. It supports a maximum power dissipation of 225mW on FR-5 board and 300mW on alumina substrate at 25°C ambient temperature. The operating junction temperature range is -55°C to +150°C.

 

This transistor is Pb-Free, Halogen Free/BFR Free, and RoHS compliant, meeting current environmental standards. It is supplied in tape and reel packaging with 3000 units per reel for automated assembly processes.

BCW32LT1G Quick Information

Product Type: Bipolar Junction Transistor (BJT)
Canonical Name: NPN Silicon General Purpose Transistor
Subcategory: Single NPN

BCW32LT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

BCW32LT1G Estimated Pricing

Qty Low High
1+ $0.24 $0.24
10+ $0.14 $0.14
100+ $0.08 $0.08
500+ $0.06 $0.06
1,000+ $0.05 $0.05
3,000+ $0.05 $0.05
6,000+ $0.04 $0.04

Estimated market price range - modelled values for guidance only, not live distributor offers.

BCW32LT1G Features

  • NPN silicon general purpose transistor.
  • 32V collector-emitter voltage rating.
  • 100mA continuous collector current.
  • SOT-23 surface mount package.
  • RoHS compliant and Pb-Free.

BCW32LT1G Applications

  • Used in low-power switching circuits.
  • Suitable for signal amplification stages.
  • Ideal for portable electronic devices.
  • Common in audio preamplifier circuits.

BCW32LT1G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage of the BCW32LT1G?

The maximum collector-emitter voltage (VCEO) is 32V.

What is the maximum collector current of the BCW32LT1G?

The maximum continuous collector current is 100mA.

What is the package type of the BCW32LT1G?

The BCW32LT1G comes in a SOT-23 (TO-236) surface mount package.

What is the operating temperature range of the BCW32LT1G?

The operating junction temperature range is -55°C to +150°C.

Is the BCW32LT1G RoHS compliant?

Yes, the BCW32LT1G is RoHS compliant and Pb-Free.

What is the DC current gain (hFE) of the BCW32LT1G?

The DC current gain ranges from 200 to 450 at IC=2mA and VCE=5V.

What is the maximum power dissipation of the BCW32LT1G?

Maximum power dissipation is 225mW on FR-5 board and 300mW on alumina substrate at 25°C.

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