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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
52,020 pcs
|
52020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,881 pcs
|
2881 pcs | On Request | 1 | On Request | On Request | 20+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Base-Emitter On Voltage (VBE(ON)) | |
| Collector Current - Continuous | |
| Collector Cutoff Current (ICBO) | |
| Collector-Base Voltage (VCBO) | |
| Collector-Emitter Voltage (VCEO) | |
| Current | |
| DC Current Gain (Minimum/Maximum @ Ic=2 mA, Vce=5 V) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Emitter-Base Voltage (VEBO) | |
| Halogen Free | |
| Lead Style | |
| Mounting Type | |
| Noise Figure (NF) | |
| Operating Temperature | |
| Output Capacitance (Cobo) | |
| Power | |
| Power Dissipation (Maximum @ Alumina Substrate, TA = 25 °C) | |
| Power Dissipation (Maximum @ FR -5 Board, TA = 25 °C) | |
| SVHC Present | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Termination Style | |
| Thermal Resistance Junction To Ambient (Maximum @ Alumina Substrate) | |
| Thermal Resistance Junction To Ambient (Maximum @ FR -5 Board) | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The BCW32LT1G is an NPN silicon general purpose transistor manufactured by On Semiconductor. It is designed for low-power switching and amplification applications in surface mount circuits. The device is rated for a maximum collector-emitter voltage of 32V and a continuous collector current of 100mA, making it suitable for a wide range of general purpose signal processing tasks.
Key electrical characteristics include a DC current gain (hFE) ranging from 200 to 450 at IC=2mA and VCE=5V, and a low collector-emitter saturation voltage of 250mV at IB=500µA and IC=10mA. The transistor also features a maximum noise figure of 10dB at IC=0.2mA, VCE=5V, and 1kHz, which supports use in low-noise amplifier stages.
The device is offered in the compact SOT-23 (TO-236) surface mount package, which is ideal for space-constrained PCB designs. It supports a maximum power dissipation of 225mW on FR-5 board and 300mW on alumina substrate at 25°C ambient temperature. The operating junction temperature range is -55°C to +150°C.
This transistor is Pb-Free, Halogen Free/BFR Free, and RoHS compliant, meeting current environmental standards. It is supplied in tape and reel packaging with 3000 units per reel for automated assembly processes.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.24 | $0.24 |
| 10+ | $0.14 | $0.14 |
| 100+ | $0.08 | $0.08 |
| 500+ | $0.06 | $0.06 |
| 1,000+ | $0.05 | $0.05 |
| 3,000+ | $0.05 | $0.05 |
| 6,000+ | $0.04 | $0.04 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) is 32V.
The maximum continuous collector current is 100mA.
The BCW32LT1G comes in a SOT-23 (TO-236) surface mount package.
The operating junction temperature range is -55°C to +150°C.
Yes, the BCW32LT1G is RoHS compliant and Pb-Free.
The DC current gain ranges from 200 to 450 at IC=2mA and VCE=5V.
Maximum power dissipation is 225mW on FR-5 board and 300mW on alumina substrate at 25°C.